TIMap-16  > Q67000-A9277

suppliers of Q67000-A9277 and PDF data of Q67000-A9277

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  

Q67000-A9277 Datasheet

\ 'IC :l.O mA'
\ R c: = 200fl
l l l III
o C ou LrA
t s-
IC 2 0.5 mA
R! 2 700s l l
0S _f II
- l r - IC= _-_- ¨AR S=5l 10C


Q67000-A9277 Price

SPECIFICATIONS (Tj = 250C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 yA -1.0 -3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V 100 nA
VDS = -30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS VDS = -30 V, VGS = 0 V, Tj = 850C -5 yA
On-State Drain Currenta ID(on) VDS < -5 V, VGS = -10 V -20 A
VGS = -10 V, ID = -3.5 A 0.080 0.100 Q
Drain-Source On-State Resistancea rDS(on) VGS = -4.5 V, ID - -2.7 A 0.140 0.170
Forward Transconductancea 9fs VDS = -15 V, ID = -3.5 A 6 S
Diode Forward Voltagea VSD Is = -1.7 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge Qg 8.5 13
Gate-Source Charge Ogs VDS = -15 V, VGS = -10 V, ID = -3.5 A 2.2 nC
Gate-Drain Charge Ogd 1 5
Turn-On Delay Time td(on) 10 20
Rise Time tr VDD = -15 V, RL = 15 Q 7 15
Turn-Off Delay Time td(off) ID -1 A, VGEN = -10 V, Rg = 6 Q 20 35 ns
Fall Time tf 10 20
Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 A/vs 30 60


Q67000-A9277 on stock

Operating Temperature -400 to +850C (-400 to +1850F)
Storage Temperature -550 to +1250C (-670 to +2570F)
Compensated Temperature Oo to +500C (320 to +1220F)
Shock MIL-STD-202, Method 213 (50 g, half sine, 11 msec)


Parameter Minimum Maximum Units
Responsivity 0.75 A/W
Sensitivity[2] 52 Mb/s 155 Mb/s -39 -36 dBm
Overload[ 2,3 ] -7 dBm
Bandwidth 52 Mb/s 155 Mb/s 35 90 MHz
Output Impedance 30 60 ohms
VDD Supply Voltage 4.75 5.25 V
VDD Supply Current 50 mA
Photodiode Supply -7 -4.5 V