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Q67000S70 Datasheet

UNIT	A max	A1	A2	A3	bp	c	DO)	EO)	e	HE	L	Lp	Q	V	W	y	zo)	O
mm	2 8	0 4 0 2	2 35 2 20	0 25	0 3 0 2	0 22 0 13	16 00 15 75	7 6 7 4	0 635	10 4 10 1	1 4	1 0 0 6	1 2 1 0	O25	0 18	0 1	0 85 0 40	80 oo

Q67000S70 Price

		Min	Typ	Max
Base saturation voltage - Basis-Sattigungsspamwng l) - Ic = 10 mA, - IB = 0.5 mA - VBEsat - IC = 50 mA, - IB = 2.5 mA - VBEsat			720 mV 810 mV
DC current gain - Kollektor-Basis-Stromverhaltn BCW 29 - VCE = 5 V, - IC = 10 [_r.A BCW 30	iS 11 hFE hFE		90 150
BCW 29 - VCE = 5 V, - Ic = 2 mA BCW 30	hFE hFE	120 215		260 500
Base-Emitter voltage - Basis-Emitter-Spannung l) - VCE = 5 V, - IC = 2 mA - VBEon		600 mV		750 mV
Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f= 100 MHz fr		100 MHz
Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V,IE = ie = 0, f= 1 MHz CCBO			4.5 pF
Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 [_r.A, Ra = 2 kQ, F f= 1 kHz, Af= 200 Hz				10 dB

Q67000S70 on stock

Parameter	Symbol	Maximum Rating	Unit
Power Dissipation	Pad	150	mW
Continuous Forward Current	If	80	mA
Reverse Voltage	VR	10	V
Operating Temperature Range	Tpr	-40C to+	OOoC
Storage Temperature Range	Ttg	-550C to +lOOoC
Solder temperature l.6 mm from body for 5 seconds at 2600C

rype	Ordering Code	Package
ICEIQS01	Q67040-S4558	P-DIP-8
ICEIQSOIG	Q67040-S4559	P-DS0-8