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Q67003H9442A203A7 Datasheet
Distributed Vcc and GND pin configuration minimizes high- speed switching noise Supports mixed-mode signal operation - 5V input and output voltages with 3.3V Vcc Supports unregulated battery operation down t0 2.7V Typical VOLP (output ground bounce) < 0.8V at Vcc=3.3V, TA=250C Latch-up performance exceeds 500mA per JEDEC stan- dard
Q67003H9442A203A7 Price
As a rule, eithera DC battery ora DC powersupply with a maximum of 5% ripple must be used for the operating voltage for DC relays. Before using a rectified AC supply, confirm that the ripple is not g reaterthan 5%. Ripple greater than this can lead to variations in the operating and reset voltages. As excessive ripple can generate pulses, the insertion of a smoothing capacitor is recommended as shown below.
Q67003H9442A203A7 on stock

Symbol Parameter Conditions Min Typ Max Unit
l02 3-state OFF-state Vi = Vcc or GND; Vcc = 5.5 V 10
current
ILI input leakage current Vi = Vcc or GND; Vcc = 5.5 V 2.0
lcc quiescent supply Vi = Vcc or GND; lo = 0 A; 40
current Vcc = 5.5 V
Ci input capacitance 10 pF
Table 9: Static characteristics type 74AHCT2G241
At recommended operating conditions; voltages are referenced to GND (ground = O V).
Symbol Parameter Conditions Min Typ Max Unit
Tamb 2 25]C
VIH HIGH-Ievel input Vcc = 4.5 V t0 5.5 V 2.0 V
voltage
VIL LOW-Ievelinput Vcc = 4.5 V t0 5.5 V 0.8 V
voltage
VOH HIGH-Ievel output VI = VIH or VIL
voltage lo = -50 Vcc = 4.5 V 4.4 4.5 V
10 = -8.0 mA; Vcc = 4.5 V 3.94 V
VOL LOW-Ievel output Vi = VIH or VIL
voltage lo = 50A; Vcc = 4.5 V 0 0.1 V
10 = 8.0 mA; Vcc = 4.5 V 0.36 V
loz 3-state OFF-state Vi = Vcc or GND; Vcc = 5.5 V 0.25
current
ILI input leakage current Vi = VIH or VIL; VCC = 5.5 V 0.1
lcc quiescent supply Vi = Vcc or GND; lo = 0 A; 1.0
current Vcc = 5.5 V
C:lcc additional quiescent Vi = 3.4 V; other inputs at 1.35 mA
supply current per Vcc or GND; lo = 0 A;
input pin Vcc = 5.5 V
Ci input capacitance 1.5 10 pF
Tamb = -40 IC to +85
VIH HIGH-Ievel input Vcc = 4.5 V t0 5.5 V 2.0 V
voltage
VIL LOW-Ievel input Vcc = 4.5 V t0 5.5 V 0.8 V
voltage
VOH HIGH-Ievel output Vi = VIH or VIL
voltage lo = -50 Vcc = 4.5 V 4.4 V
10 = -8.0 mA; Vcc = 4.5 V 3.8 V
VOL LOW-Ievel output Vi = VIH or VIL
voltage lo = 50 Vcc = 4.5 V 0.1 V
10 = 8.0 mA; Vcc = 4.5 V 0.44 V


SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 1.5 mA 65 V
VGSth gate-source threshold voltage VDS = 10 V; ID = 150 mA 4 5.5 V
IDSS drain-source leakage current VGS = 0; VDS = 32 V 2.2
IDSX drain cut-off current VGS = VGSth + 9 V; VDS = 10 V 18 A
IGSS gate leakage current VGS = +15 V; VDS = 0 25 nA
9fs forward transconductance VDS=10V;ID=4A 4 S
RDSon drain-source on-state resistance VGS = VGSth + 9 V; ID = 4 A 160 ml
Ciss input capacitance VGS = 0; VDS = 32 V; f= 1 MHz (i) 82 pF
Coss output capacitance VGS = 0; VDS = 32 V; f= 1 MHz (i) 40 pF
Crss feedback capacitance VGS = 0; VDS = 32 V; f= 1 MHz (i) 6 pF