QATPP-N1 Datasheet| | | | Symbol | Parameter | Typ. | Max | Unit | | | RgjA | Thermal Resistance, Junction-to-Ambient | | 41 7 | 1'C/W | | Package Marking and Ordering Information | | | Device Marking | Device | Package | Reel Size | Tape Width | Quantity | | | FCH47N60 | FCH47N60 | T0-247 | | | 30 | | FCA47N60 | FCA47N60 | T0-3P | | | 30 | | Electrical Characteristics Te = 250C unless otherwise noted | | | Symbol | Parameter | Conditions | Min | Typ | Max | Units | | | Off Characteristics | | BVDSS | Drain-Source Breakdown Voltage | VGS = OV, ID = 250ccA, Tj = 25YC | 600 | | | V | | VGS = OV, ID = 250ccA, Tj = 1501C | | 650 | | V | | CBVDSS | 3 | Breakdown Voltage Temperature Coefficient | ID = 250ccA, Referenced t0 25IC | | 0 6 | | vnc | | BVDS | Drain-Source Avalanche Breakdown Voltage | VGS = OV, ID = 47A | | 700 | | V | | IDSS | Zero Gate Voltage Drain Current | VDS = 600V, VGS = OV VDS = 480y Tc = 125YC | | | 1 10 | o | | IGSSF | Gate-Body Leakage Current, Forward | VGS = 30y VDS = OV | | | 100 | nA | | IGSSR | Gate-Body Leakage Current, Reverse | VGS = -30V, VDS = OV | | | -100 | nA | | On Characteristics | | VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 2500:A | 3 0 | | 5 0 | V | | RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 23.5A | | 0 058 | 0 07 | l | | gFS | Forward Transconductance | VDS = 40V, ID = 23.5A (Note 4) | | 40 | | S | | Dynamic Characteristics | | ciss | Input Capacitance | VDS = 25V, VGS = OV, | | 5900 | 8000 | pF | | coss | Output Capacitance | f= 1.OMHz | | 3200 | 4200 | pF | | Crss | Reverse Transfer Capacitance | | 250 | | pF | | coss | Output Capacitance | VDS = 480V, VGS = OV, f = 1.OMHz | | 160 | | pF | | Coss eff. | Effective Output Capacitance | VDS = OV t0 400V, VGS = OV | | 420 | | pF | | Switching Characteristics | | td(on) | Turn-On Delay Time | VDD = 300V, ID = 47A | | 185 | 430 | ns | | tr | Turn-On Rise Time | RG = 25 [ | | 210 | 450 | ns | | td(off) | Turn-Off Delay Time | | 520 | 1100 | ns | | tf | Turn-Off Fall Time | (Note 4, 5) | | 75 | 160 | ns | | Qg | Total Gate Charge | VDS = 480V, ID = 47A | | 210 | 270 | nC | | Qgs | Gate-Source Charge | VGS = 10V | | 38 | | nC | | Qgd | Gate-Drain Charge | (Note 4, 5) | | 110 | | nC | | Drain-Source Diode Characteristics and Maximum Ratings | | Is | Maximum Continuous Drain-Source Diode Forward Current | | | 47 | A | | ISM | Maximum Pulsed Drain-Source Diode Forward Current | | | 141 | A | | VSD | Drain-Source Diode Forward Voltage | VGS = OV, IS = 47A | | | 1 4 | V | | trr | Reverse Recovery Time | VGS = OV, IS = 47A | | 590 | | ns | | Qrr | Reverse Recovery Charge | dIF/dt =1 00A/ccs (Note 4) | | 25 | | ccC | | NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. lAS = 18A, VDD = 50V, Re = 251 , Starting Tj = 25YC | | | | | | | | | | | | | | | | |
QATPP-N1 Price The radiation hardened ISL72991RH is a low dropout adjustable negative regulator with an output voltage range of -2.25V to -26V. The device features a lA output current capability, an adjustable current limit pin (ILIM) and a shutdown pin (SD) for easy on/off control. QATPP-N1 on stock| CHARACTERISTIC | S YlbIBOL | CONDITION | HIN | TYP | HAX | UNIT | | j pL | ICBO | VCB-10V,IE-O | | | O1 | nA | | -L | EBO | VEB -20Y Ic - O | | | 1.0 | A | | | hFE | VCE=lOV IC-lOmA | 3 0 | 7 0 | | | | =p·- | VCE(aat) | IC -lO mA IB - l niA | | o2 | | v | | ·s | VBE(88t) | IC-lOmA,IB-lmA | | 0.8 2 | | V | | j P | Cob | VCB - iov IE - Oi f -1MHz | | o8 | 1O | pF | | | Cre | VCB - 10V,IE - O ~ f rlMHz (Note 2) | | 0.3 5 | | pF | | { | Clb | VEB-O ,IC-O, f - 1 MH z | | 1.7 | | pF | | | | | | | |
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