| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
QCO4B-14.31818MHZ Price
QCO4B-14.31818MHZ on stock The K4S511632D is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608words by 16bits, fabri- cated with SAMSUNG's high performance CMOS technology. Syn- chronous design allows precise cycle control with the use of system clock l/0 transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system appli- cations. Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=l.0 psec Forward Surge Current, tp=l.0 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance |
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