QD2147H-2(D2147H) Datasheet| Parameter | Symbof | Conditions | Applied | MIN | TYP. | MAX | Unit | | Reverse voltage | VR | IR =luA | PDl, PD2 | 5.0 | | | V | | Dark current | Id | VR =1V | PDl, PD2 | | 0.05 | 5 | nA | | | C¨ | VR = O, f=lMHz | PD1 | | 300 | 600 | pF | | Terminal capacitance | Ct2 | VR=O, f=lMHz | PD2 | | 100 | 200 | pF | | | 1scl | Ee= l.OmW/cm | PD1 | | 4.5 | | A | | *zShort circuit current | ISC2 | Ee =l.OmW/cm | PD2 | | 10O | | A | | | | ^= 600nm | PDl, PD2 | 0.14 | 0.24 | 0.39 | | | *4Short circuit current ratio | Iso/lsc, | A=900nm | PDl, PD2 | 4.5 | 5.10 | 8.4 | | | | | | | | | |
QD2147H-2(D2147H) Price t See application information section for capacitor selection details. Figure l. Typical Application Configuration (For Fixed Output Options) functional block diagram-adjustable version QD2147H-2(D2147H) on stock| I I _ VGs = 10V | | | | | | | | | ID = 1/21D D.. o_ T_ot | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | r | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |
| | | | Limits | | | Symbol | Parameter | Test conditions | Min | Typ | Max | Unit | | V (BR) DSS | Drain-source breakdown voltage | ID = ImA, VGs = OV | 500 | | | v | | V (BR) GSS | Gate-source breakdown voltage | IG = +100ccA, VDS = OV | ±30 | | | v | | IGSS | Gate-source leakage current | VGS = +25V, VDS = OV | | | ±10 | | | IDSS | Drain-source leakage current | VDS = 500V, VGS = OV | | | 1 | mA | | VGS (th) | Gate-source threshold voltage | ID = 1rTiA, VDS = 10V | 2 | 3 | 4 | v | | rDS (ON) | Drain-source on-state resistance | ID = 1A, VGS = 10V | | 3 4 | 4 4 | | | VDS (ON) | Drain-source on-state voltage | ID = 1A, VGS = 10V | | 3 4 | 4 4 | v | | yfs | Forward transfer admittance | ID = 1A, VDS = 10V | 1 0 | 1 5 | | S | | Ciss | Input capacitance | | | 300 | | pF | | Coss | Output capacitance | VDS = 25y VGS = Oy f= 1MHz | | 35 | | pF | | Crss | Reverse transfer capacitance | | 6 | | pF | | td (on) | Turn-on delay time | | | 13 | | ns | | tr | Rise time | VDD = 200V ID = 1A, VGS = 10V, RGEN = RGS = sol | | 10 | | ns | | td (off) | Turn-off delay time | | 30 | | ns | | tf | Fall time | | 30 | | ns | | VSD | Source-drain voltage | Is = 1A, VGS = OV | | 1 5 | 2 0 | v | | Rth (ch-c) | Thermal resistance | Channel to case | | | 2.08 | IC/W | | | | | | | |
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