| Parameters | 25TTS..S | Units | Conditions |
| IT(AV, Max.AverageOn-stateCurrent | 16 | A | @ Tc = 930 C, 1 800 conduction halfsine wave |
| IRMS Max.RMSOn-stateCurrent | 25 |
| ITSM Max.PeakOne Cycle Non-Repetitive | 300 | 10ms Sine pulse, rated VRRMapplied |
| SurgeCurrent | 350 | 1 0ms Sine pulse, no voltage reapplied |
| 12t Max.12tforfusing | 450 | A2S | 10ms Sine pulse, rated VRRMapplied |
| 630 | 1 0ms Sine pulse, no voltage reapplied |
| 12 Max.126itforfusing | 6300 | A2 | t= 0.1 t0 10ms, no voltage reapplied |
| VTM Max. On-stateVoltage Drop | 1 25 | V | @16A,T1= 250C |
| rt On-state slope resistance | 12 0 | m | Ti= 1250C |
| VT[TO) Threshold Voltage | 1 0 | V |
| IRk/IDM Max.Reverse and Direct | 0 5 | mA | Ti=25 0C | VR = rated VRRM/VDRM |
| LeakageCurrent | 10 | T= 125 0C |
| IH Holding Current | Typ | Max | | Anode Supply = 6V, Resistive load, Initial IT=1A |
| | 100 | mA | 25TTS08S, 25TTS12S |
| 100 | 150 | 25TTS16S |
| IL Max. Latching Current | 200 | mA | AnodeSupply=6V,Resistiveload |
| dv/dt Max. Rate of Rise of off-state Voltage | 500 | V/IJs | |
| di/dt Max. Rate of Rise of turned-on Current | 150 | A/l-is | |
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