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QF1-50BR1 Datasheet

VDD= 18V MHz
_lY n
7
j 50C l kH Z
-_ _ _ 200 kHz
_ ___7
20 kHz


QF1-50BR1 Price

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QF1-50BR1 on stock
The CY62147CV25/30/33 are high-performance CMOS static RAMs organized as 256K words by 16 bits. These devices feature advanced circuit design to provide ultra-low active cur- rent. This is ideal for providing More Battery Life rM (MoBL rM) in portable applications such as cellular telephones. The de- vices also have an automatic power-down feature that signifi-

PARAMETER SYMBOL TEST CONDITION Vcc Ta= 25aC Ta = - 40~850C
(V) Min Typ Max Min Max UNIT
High - Level Input Voltage VIH 2.0 3.0 5.5 1.50 Vcc x 0.7 1.50 Vcc x 0.7 V
Low - Level Input Voltage VIL 2.0 3.0 5.5 0.50 Vcc x 0.3 0.50 Vcc x 0.3 V
High - Level Output Voltage VOH VIN = IOH= - 50/uA 2.0 3.0 4.5 1.9 2.9 4.4 2.0 3.0 4.5 1.9 2.9 4.4 V
VIH or VIL IOH = -4mA IOH = -8mA 3.0 4.5 2.58 3.94 2.48 3.80
Low - Level Output Voltage VOL VIN = IOL= 50,uA 2.0 3.0 4.5 0.0 0.0 0O O1 0.1 0.1 0.1 0.1 0.1 V
VIH or VIL IOL = 4mA IOL = 8mA 3.0 4.5 0.36 0.36 0.44 0.44
Input Leakage Current lI N VIN = 5.5V or G \JD 05.5 ±0.1 ±1.0
QuiescentSupply Current lcc VIN = VCC or GND 5.5 4.0 40.0 A