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QG82855GHE (QG75ES) Datasheet

Parameter	Test Conditions		Min	Typ.	Max	Unit
Collector - Emitter Breakdown VCEO(BR)* Voltage	lc=0.2mA		250			V
VEBO Emitter - Base Voltage	IE = 1.OmA lc = 0		6			V
	VCE = 250V VBE = -1.5V				O05	mA
ICEV Collector Cut-off Current		TCASE =1250C			0.2	mA
IEBO Emitter Cut-off Current	lc = 0 VEB = -6V				1.0	mA
VCE(sat)* Collector - Emitter Saturation	IC = 1.2A lB = 0.2A			0.15	0.5	V
Voltage	lc = 5A lB = 1.OA			0.8	3	V
VBE(sat)* Base - Emitter	lc = 1.2A lB = 0.2A			1.0	1.6	V
Saturation Voltage	IC = 5A lB = 1.OA			1.5	2	V
hFE. DC Current Gain	lc = 1.2A VCE = 1.OV		12	28	70
Second Breakdown IS/b Collector Current	VCE=50V				0.9	A
Cobo Output Capacitance	VCB = 10V IE = 0				1 50	pF
tr Rise Time				0.3	0.75
ts Storage Time	Vc = 250V lc = 1.2A			2.8	5
tf Fall Time	lB = 0.2A IBl = lB2			0.3	0.75	0S
td Delay Time	lB = 0.2A IBl = lB2			0.02		0S

QG82855GHE (QG75ES) Price


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QG82855GHE (QG75ES) on stock

MODE	CONFIGO	CONFIG1	DESCRIPTION
1	0	O	Full duplex transceiver mode
2	0	1	Transmit only mode
3	1	O	Receive only mode
4	1	1	Repeater mode

Forward Voltage (Note l) IF=1.OA		0.45	0.50	O55	070	V
			Typ	Max
Reverse Leakage Current (Note l) VR=40V, TA=250C VR=40V, TA=1000C VR=4V, TA=250C VR=4V, TA=1000C VR=6V, TA=250C VR=6V, TA=1000C	IR		10 1 1 5 1.5	1 0 10 50 2 75 3	1.0	mA mA uA mA uA mA
Junction Capacitance VR=4V, f=l.OM Hz	Cj		110			pF