RK73H1ELTP51R0F Datasheet 1000 Volts Supply Voltage, Surge (Applied between P - N) VCC(surge) CollectorDissipation Pc 62 Watts RK73H1ELTP51R0F Price| | mm | inch | | DIM | MIN | TYP | MAX | MIN | TYP | MAX | | A | 3.35 | | 3.65 | 0.132 | | 0.144 | | A1 | 0.00 | | 0.10 | 0.000 | | 0.004 | | B | 0.40 | | 0.60 | 0.016 | | 0.024 | | C | O35 | | 0.55 | 0.013 | | 0.022 | | D | 9.40 | | 9.60 | 0.370 | | 0.378 | | D1 | 7.40 | | 7.60 | 0.291 | | 0.300 | | E | 9.30 | | 9.50 | 0.366 | | 0.374 | | E1 | 7.20 | | 7.40 | 0.283 | | 0.291 | | E2 | 7.20 | | 7.60 | 0.283 | | 0.300 | | E3 | 6.10 | | 6.35 | 0.240 | | 0.250 | | E4 | 5.90 | | 6.10 | 0.232 | | 0.240 | | e | | 1.27 | | | 0.050 | | | F | 1.25 | | 1.35 | 0.049 | | 0.053 | | H | 13.80 | | 14.40 | 0.543 | | 0.567 | | h | | O50 | | | 0.002 | | | L | 1.20 | | 1.80 | 0.047 | | 0.071 | | q | | 1.70 | | | 0.067 | | | a | 00 | | 80 | | | | | | | | | | |
RK73H1ELTP51R0F on stock| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | | Input Capacitance | CIN | DSi, MD | | | 1 2 | pF | | Input Capacitance | CIN | DS2, CLR, STB, Dli - DI8 | | | 9 | pF | | Output Capacitance | COUT | DOi - D08 | | | 1 2 | pF | | | | | | | |
16M-bits Flash memory is a l,048,576 words, 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(Dlvided bit-line NOR) architecture for the memory cell. 4M-bits SRAM is a 262,144words unsynchronous SRAM fabricated by silicon-gate CMOS technology. | Operation | Address | DQ7 | DQ6 | DQ5 | | Program | Any Address | DQ7 | Toggle | 0 | | Program Error | Any Address | DQ7 | Toggle | 1 | | Chip Erase | Any Address | 0 | Toggle | 0 | | Erase Error | Any Address | 0 | Toggle | 1 | | | | | |
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