NOTES: 1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150YC. 3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
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RNR55C4750FS on stock| Items | Symbols | Test Conditions | Min | Typ. | Max | Units |
| Zero Gate Voltage Collector Current | ICES | VCE=OV VCE=1400V | | | 1 0 | mA |
| Gate-Emitter Leackage Current | IGES | VCE=OV VGE=+ 20V | | | 200 | uA |
| Gate-Emitter Threshold Voltage | VGE(thl | VCE=20V lc=50mA | 6 0 | 8 0 | 9 0 | V |
| | | Ti= 250C VGE=15V lc=50A | | 2 7 | 3 0 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | Ti=1250C VGE=15V lc=50A | | 3 3 | |
| Input capacitance | Cies | VGE=OV | | 5000 | | pF |
| Output capacitance | Coes | VCE=10V | | 750 | |
| Reverse Transfer capacitance | Cres | f=lMHz | | 330 | |
| | tON | Vcc=600V | | | 1 2 | |
| Turn-on Time | tr | lc=50A | | | 0 6 |
| | tOFF | VGE=+ 15V | | | 1 0 | US |
| Turn-off Time | tf | Rc=2,4Q | | | 0 3 |
| Diode Forward On-Voltage | VF | IF=50A VCE=OV | | 2 4 | 3 3 | V |
| Reverse Recovery Time | t | IF=50A | | | 350 | ns |
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| B85 =1 [pF] | B85 =0 [pF] | B84 | B83 | B82 | B81 | B80 | B79 | B78 |
| O | 8.0 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 0.5 | 8.5 | 1 | 1 | 1 | 1 | 1 | 1 | 0 |
| 1.0 | 9.0 | 1 | 1 | 1 | 1 | 1 | O | 1 |
| 1.5 | 19.5 | 1 | 1 | 1 | 1 | 1 | O | 0 |
| | | | | | | | | |
| 63.0 | 71.0 | 0 | O | O | O | 0 | O | O |
| 63.5 | 71.5 | 0 | O | O | O | 0 | O | O |
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