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ROHM-30DT Datasheet

Characteristic	Symbol	SB 3030PT	SB 3035PT	SB 3040PT	SB 3045PT	SB 3050PT	SB 3060PT	Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage	VRRM VRWM VR	30	35	40	45	50	60	V
RMS Reverse Voltage	VR(RMS)	21	24.5	28	31.5	35	42	V
Average Rectified Output Current @Tc = 950C	lO	30						A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)	IFSM	275						A
Forward Voltage @IF = 15A	VFM	0 55				0 70		V
Peak Reverse Current @TA = 250C At Rated DC Blocking Voltage @TA = 1000C	IRM	1.0 75						mA
Typical Junction Capacitance (Note l)	cj	1100						pF
Typical Thermal Resistance Junction to Case (Note 2)	RejC	2O						K/W
Operating and Storage Temperature Range	Tj, TSTG	-65 to +150						ac

ROHM-30DT Price

			Rating
ltem	Symbol	Conditions	2	4	6	Unit
Repetitive peak reverse voltage	VRRM		200	400	600	V
Non-repetitive peak reverse voltage	VRSM		200	400	600	v
Average output current	Io	Resistive load Ta=400C	1.0			A
Surge current	IFSM	Sine wave 10ms	40			A
Operating junction temperature	Tj		-40 to +150			aC
Storage temperature	Tstg		-40 to +150			aC

ROHM-30DT on stock

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Preliminary Revision: 0.14 Date: 97.07.29 Page 2 0f 7 Note: The device data in these specifications are based on engineering samples, and are preliminary. QX2012 specifications are subject to change without notice.

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