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ROHMRDS035 Datasheet

1 1 STEREOINPUT I SELECTABLE INPUT GAIN FOR OPTIMAL ADAPTION TO DIFFERENT SOURCES I INPUT AND OUTPUT FOR EXTERNAL EQUALIZER OR NOISE REDUCTION SYS- TEM I LOUDNESS FUNCTION I VOLUMECONTROLIN l.25dB STEPS I TREBLEAND BASS CONTROL I FOURSPEAKERATTENUATORS: - 4 1NDEPENDENT SPEAKERS CONTROL IN l.25dB STEPS FOR BALANCEAND FADER FACILITIES - INDEPENDENT MUTE FUNCTION I ALL FUNCTIONS PROGRAMMABLE VIA SE- RIAL BUS
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Features and Benefits . Monolithic Hall lC for High Reliability . Single +5V Supply . High Isolation Voltage . Lead-free . Automotive Temperature Range . End-of-Iine Factory Trimmed for Gain and Offset . Ultra-Iow Power Loss: Low Resistance of Primary Conductor . Ratiometric Output from Supply Voltage . Low Thermal Drift of Offset Voltage . On-chip Transient Protection . Small Package Size with Easy Mounting Capability
ROHMRDS035 on stock

Characteristic Symbol Test Conditions Min. Typ. Max. Units

Collector Cutoff Current ICES VCE=VCES VGE=OV l.0 mA

Gate Leakage Current IGES VGE=VGES VCE=OV - 60 D:A

Gate-EmitterThreshold Voltage VGE(th) lc=45mA, VCE=10V 5.0 6.0 7.0 Volts

Collector-Emitter Saturation Voltage VCE(sat) lc=450A, VGE=15V - 1.6 2.2 Volts lc=450A, VGE=15V, 1.6 - Volts Ti=125YC

TotaIGate Charge QG Vcc=300V, 2790 - nC lc=450A, VGE=15V

Diode Forward Voltage VFM IF=900A 2.0 2.6 Volts IF=450A 1.7 - Volts IF=300A 1.3 - Volts

Symbol	Parameter	Test Conditions	Min	Typ.	Max	Unit
tr(Voff) tf te	Off-voltage Rise Time Fall Time Cross-over Time	VDD = 480 V ID = 9A RG = 4.7 I VGS = 10 V (see test circuit, figure 5)		1 6 1 8 26	23 25 35	ns ns ns

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