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ROP-101-666-CRIC Datasheet

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ROP-101-666-CRIC Price

SPECIFNCATIONS
		Test Conditions Unless Specified		Limits
Parameter	Symbol	Vcc = 10 V, RT = 100 kQ, CT = 330 pF CREF = 0.1 yF, -40 0C < TA < 85 0C		Mina	Typb	Maxa	Unit
Reference
			SiP2800/1/2/4	4 925	5 000	5 075	V
		ILOAD = 0.2 mA, TA= 25 0C	SiP2803/5	3 940	4 000	4 06
Reference Voltage	VREF	SiP2800/1/2/4		4 88	5 00	5 10
Reference Voltage	VREF	SiP2803/5		3 90	4 00	4 08
Load Regulation	AVLOAD	0.2rTiA< ILOAD <5rTiA			10	30	mV
		Vcc=10 V to Clamp , TA = 25 0C				1 9
Line Regulation	AVLINE	Vcc=10 V to Clamp				2 5	mVN
Noise	VNOISE				130		liV
Short Circuit Current	lsc	10 Hz < f< 10 kHz, TA = 25 0C		-5		-35	mA
Oscator
			SiP2800/1/2/4	40	46	52
Frequency	fOSc		SiP2803/5	26	31	36	kHz
Temperature Stability					2 5		%
Amplitude	VP-P			2 25	2 40	2 55	V
Peak Voltage	VP				2 45		V
Error Amplifier
		COMP= 2.5V	SiP2800/1/2/4	2 44	2 50	2 56	V
Input Voltage	VIN	COMP= 2.0V	SiP2803/5	1 95	2 00	2 05	V
Input Bias Current	lBIAS1			1		1	VA
Open Loop Gain	Av			60	80		dB
COMP Sink Current	ISINK	FB = 2.7 V, COM P= 1.1 V		0 3		3 5	mA
COMP Source Current	ISOURCE	FB = 1.8 V, COMP = VREF - 1.2 V		-0.2	-0.5	-0.8	mA
Gain Bandwidth	Bw				2		MHz
PWM and Overcurrent Comparator
			SiP2800/2/3	97	99	100	%
Maximum Duty Cycle	DMAX		SiP2801/4/5	48	49	50
Minimum Duty Cycle	DMIN	COMP=OV				0
Gamne	Av	0< Vcs< 0.8V		1 2	1 65	1 9	VN
Max. Input Signal	VIMAX	COMP= 5V		0.9	1 0	1 1	V
Input Bias Current 2	lBIAS2			-200		200	nA

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TYPICAL CHARACTERISTICS WITH POWER APPLIEO \'o delermtne fesislance value witn power apLAiecl, umam a rnuILiplyir*g fdclur frurri ttie dpplicaLle Lurve L,eiuw. The fn:e-c}ir curve is for the condition of heat removal by free-air convection only. The heat sink curve is for the maximum cooiing rate condition of a heat sink strap, with leads attached to an infinite heat sink. Actual conditions encountered will be between these two extremes. After selecting an applicable multiplying tactor trom tigure 2 0r 3, muitiply this by the 250C zero power resistance. This product is then correcteo for tne actual ambieril Lerr~perdture by u::,e uf t.lre dppIupjiak Le iciture LuIUJnn in Llle hlomincil Resistance at Various Temperatures table.

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
VCEO	collector-emitter voltage	open base		20	V
VCBO	collector-base voltage	open emitter		30	V
VEBO	emitter-base voltage	open collector		3	V
ICM	peak collector current			50	mA
Ptot	total power dissipation	up to Ts = 70 IC; note 1		300	mW
Tstg	storage temperature range		-65	+150
Tj	junction temperature			150

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