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ROP10111891R1A Datasheet

[ Frequency (Min.) 5-350 MHz 10-250 MHz 10-250 MHz '
Small Signal Gain (Min.) Gain Flatness (Max.) Noise Figure (Max.) SWR (Max.) Input/Output Power Output (Min.) @ ldB comp. DC Current (Max.) 35.0 dB < +0.5 dB 1.7 dB +0.5 dBm 14 mA 34.0 dB +0.7 dB 2.5 dB 1.7:1 -1.0 dBm 16 mA 33.0 dB +1.0 dB 3.0 dB 1.9:1 -2.0 dBm 17 mA


ROP10111891R1A Price
(2) The technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. It neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license.
ROP10111891R1A on stock

Mode of operation: 2-tone CW, 100 kHz spacing; IDQ = 1130 mA; f = 890 MHz
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
Gp gain power PL = 125 W (PEP) 14.6 15.5 dB
11D drain efficiency 33 37 %
IRL input return loss -12 -6 dB
d3 third order inter modulation distortion -32 -25 dBc
Mode of operation: GSM EDGE; IDQ = 750 mA; f = 920 MHz
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
Gp gain power PL= 45 W (AV) 15 dB
11D drain efficiency 32 %
ACPR 400 adjacent channel power ratio -64 dBc
EVM (AV) EVM rms average signal distortion 2 %
EVM peak EVM rms peak signal distortion 2.2 %
Mode of operation: 1-tone CW; IDQ = 1000 mA; f = 920 MHz
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
Gp gain power Pu = PL i dB = 125 W 16.5 dB
11D drain efficiency 54 %


SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VRRM repetitive peak reverse voltage 30 V
VR continuous reverse voltage 30 V
IF continuous forward current see Fig.2; note 1 200 mA
IFRM repetitive peak forward current 400 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 IC prior to surge; see Fig.4 t = 1 ccs t = 100 ffS t=ls 9 3 1 A A A
Ptot total power dissipation Tamb = 25 IC; note 1 350 mW
Tstg storage temperature -65 +200
Tj junction temperature 200