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ROP101120-4C R1A Datasheet

^ t- -v----
-- _r---.t~-
-100uA Load 3mA Load
lOOmA Load
300mA Load


ROP101120-4C R1A Price

LL) Te = Ta
INFINITE HEAT SINK
CERAMIC SUBSTRATE 50 x 50 x 0.8 mmt
NO HEAT SINK
C n
b


ROP101120-4C R1A on stock
An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V. The charge pump is limited to 2.5 yA to establish a controlled turn on time of typically l ms

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--rnT n ni 7 R,(11W) 0.1882 0.3214 0.1137 2.24'10"
l l U IXI 0 1512 0 0392 7.86t10'4 9.41*10"
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