| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| ROS-3080-1PH19 | MINI | 2007 | 1500 |
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| ROS-3080-1PH19 | MINI | 2009+ | 9710 |
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| ROS-3080-1PH19 | Mini-Circuit | 100 |
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| ROS-3080-1PH19 | MINI | 08+ | 280 |
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| ROS-3080-1PH19 | MINI | N/A | 100 |
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| ROS-3080-1PH19 | MINI | NEW*ORIGIN | 08+ |
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| ROS-3080-1PH19 | mini-circuit | 独立分销,原厂订货, | 07+ | 168 |
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| ROS-3080-1PH19 | MINI | N/A | N/A | New & Original/stock | 100 |
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ROS-3080-1PH19 Datasheet Advanced DMOS Technology These enhancement-mode (normally-off) power transistors util ize a wrtical DMOS structure and Supertex's well-proven silicon- gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negatiw temperature coefficlent inherent in MOS devices. Characteristic of all MOS structures, thase devices are free from thermal runaway and thermally- induced secondary breakdown. Supertex Vertical DMOS Power FETs are ideally suited to a wide range of switching and amplifying applications where high break down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ROS-3080-1PH19 on stock HEADQUARTERS 13-1, Himemuro-cho, lkeda City, Osaka 563-8501, JAPAN Phone +81-727-53-6003 Fax +81-727-53-2120 YOKOHAMA OFFICE (lnternational Sales) 3-2-3, Shin-Yokohama, Kohoku-ku, Yokohama City, Kanagawa 222-8530 JAPAN Phone81-45-477-1697 Fax81-45-477-1694 1695 http://www ricoh co.jp/LSI/english/ (2) The technical information described in this material is limited to showing representative character- istics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. |
