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SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCBO collector-base voltage open emitter 20 V
VCER collector-emitter voltage RBE=100 I 19 V
lc collector current (DC) 500 mA
Ptot total power dissipation Ts " 75 IC; note 1 1 W
hFE DC current gain lc = 300 mA; VCE = 5 V 25
fT transition frequency lc = 300 frlA; VCE = 5 V; Tamb = 25 IC 1 GHz
Tj junction temperature 150 IC


ROU680GAKAVSY on stock
Fig. 1 shows the equivalent circuit for the local oscillator. In this circuit, when Ci = 22 pF, the change in the negative resistance versus C2 iS shown in Fig. 2, the change in the operational load capacitance is shown in Fig. 3, and the frequency deviation is shown in Fig. 4. In the application circuit, C2 = 120 pF, and in this case the negative resistance according to Fig. 2 is -58 I . In order to increase the negative resistance, it is necessary to decrease the value of C7. To increase the oscillation level, it is possible to add extemal resistor Ri and raise the local oscillator current. However, the oscillation level on pin l must be set t0 110 dB or less. If set to a greater level, distortion will occur in the oscillation waveform.
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorad0 80217 USA Phone: 303-675-2175 0r 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 0r 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com