RP-153.3D Datasheet| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit | | V(BR)DSS | Drain-source Breakdown Voltage | ID = 250 pA, VGS = 0 | 60 | | | V | | IDSS | Zero Gate Voltage Drain Current (VGS = 0) | VDS = Max Rating VDS = Max Rating Tc = 1250C | | | 1 10 | pA UA | | IGSS | Gate-body Leakage Current (VDS = 0) | VGS=±20 V | | | ±100 | nA | | | | | | | |
RP-153.3D Price| Parameter | Description | Test Conditions | Min | Max | Unit | | VIH | High-Ievel Input Voltage | Except Crystal Inputs | 2.0 | | V | | VIL | Low-Ievel Input Voltage | Except Crystal Inputs | | 0.8 | V | | VOH[4] | High-Ievel Output Voltage | VDD = VDD Min. | IOH= -30 mA | CLKA | 2.4 | | V | | VOL[4] | Low-Ievel Output Voltage | VDD = VDD Min. | IOL= 10 mA | CLKA | | 0.4 | V | | IOH[4] | Output High Current | VOH= 2.OV | | -35 | mA | | IOL[4] | Output Low Current | VOL= 0.8V | 22 | | mA | | IIH | Input High Current | VIH= VDD | -2 | 2 | | | IIL | Input Low Current | VIL= OV | | 20 | | | IDD[5] | Power Supply Current | PD HIGH, CLKA = 50 MHz | | 42 | mA | | IDD | Power Supply Current | PD LOW, Logic Inputs LOW | | 100 | cCA | | IDD | Power Supply Current | PD LOW, Logic Inputs HIGH | | 40 | oA | | RPU[4] | Pull-up Resistor | VIN =VDD - 1.0 V | | 700 | kl | | | | | | | | |
RP-153.3D on stock| Symbol | Characteristic | Min | Typ. | Max | Units | Test Condition | | BVDSS | Drain-Source Breakdown Voltaqe | -60 | | | v | VGS=OV,ID=-250cd\ | | BV | Breakdown Voltage Temp. Coeff. | | -0.05 | | V/oC | ID=-250cCA See Fig 7 | | VGS(th) | Gate Threshold Voltage | -2.0 | | -4.0 | v | VDS=-5V,ID=-250A | | | Gate-Source Leakaqe , Forward | | | -100 | | VGS=-20V | | IGSS | Gate-Source Leakage , Reverse | | | 100 | nA | VGS=20V | | | | | | -10 | | VDS=-60V | | IDSS | Drain-to-Source Leakage Current | | | -100 | | VDS=-48V,TC=1250C | | RDScon) | Static Drain-Source On-State Resistance | | | 0.5 | l | VGS=-10V,ID=-2.7A @ | | 9fs | Forward Transconductance | | 2.2 | | S | VDS=-30V,ID=-2.7A @ | | Ciss | Input Capacitance | | 270 | 350 | pF | VGS=OV,VDS=-25V,f =1MHz | | Coss | Output Capacitance | | 90 | 135 | | Crss | Reverse Transfer Capacitance | | 25 | 35 | See Fig 5 | | td(on) | Turn-On Delay Time | | 10 | 30 | | | | tr | Rise Time | | 19 | 50 | VDD=-30V,ID=-6.7A, | | td(off) | Turn-Off Delay Time | | 21 | 50 | ns | RG=24 I | | tf | Fall Time | | 16 | 40 | See Fig '13 0@ | | Qg | Total Gate Charge | | 9 | 1 1 | | VDS=-48V,VGS=-10V, | | Qgs | Gate-Source Charge | | 1.8 | | nC | ID=-6.7A | | Qgd | Gate-Drain("Miller") Charge | | 4.2 | | See Fig 6 & Fig '12 0@ | | | | | | | |
| Maximum instantaneous IF = 1.OA, TJ = 250C forward voltage at: (1) IF = 1.OA, TJ = 1250C IF = 2.OA, TJ = 250C IF = 2.OA, TJ = 1250C | VF | 0.77 0.62 0.86 0.70 | V | | Maximum DC reverse current TJ = 250C at rated DC blocking voltage(') TJ = 1250C | IR | 1.0 0.5 | VA mA | | | | |
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