TIMap-12  > RP1005S-R10-F
description RES HP .10 OHM 1/6W 1% 0402 SMD
Technical/Catalog Information RP1005S-R10-F
Vendor Susumu Co Ltd (VA)
Category Resistors
RoHS Status RoHS Compliant
Other Names RP1005S R10 F RP1005SR10F RP10S 10FDKR ND RP10S10FDKRND RP10S.10FDKR
Lead Free Status Lead Free
Packaging Digi-Reel庐
Tolerance 卤1%
Temperature Coefficient 0/+200ppm/掳C
Resistance In Ohms 0.10
Voltage - Working 0.129V
Power (Watts) 0.167W, 1/6W
Lead Style Surface Mount (SMD - SMT)
Case 0402 (1005 metric)
Composition Metal Film

suppliers of RP1005S-R10-F and PDF data of RP1005S-R10-F

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
RP1005S-R10-F         10000 


RP1005S-R10-F     09+     
    Nuoxinyuan Electronics Co.,Ltd
  • Contact:Regina
  • Tel:86-755-83957733
  • Fax:86-755-83956848
  • Email: regina@nxy-ic.com
RP1005S-R10-F         7250 


RP1005S-R10-F     08+    10000 
    Hongtu Trading Limited
  • Contact:yan
  • Tel:86-755-82500330
  • Fax:
  • Email: hongtutl@163.com
RP1005S-R10-F     06+  new and original in   10000 
    Bosin (HK) Electronics Limited..
  • Contact:Baron
  • Tel:86-755-83640678
  • Fax:86-755-83227368
  • Email: faith@bosin.hk
RP1005S-R10-F         10000 
    PERFECTION INT鈥橪 GROUP (HONGKO..
  • Contact:SUN
  • Tel:0086-755-25887780
  • Fax:0086-755-25831006
  • Email: david@perfectionhk.com

RP1005S-R10-F Datasheet

3 PIN SOT-223 Dimensions in (mm)
JEDEC T0-261 (AA) Variation MIN NOM MAX
A 1.80
Al 0.02 0.10
A2 1.50 1.60 1.70
b 0.66 0.76 0.84
b2 2.90 3.00 3 .10
c 0 23 0.30 0 35
D 6 30 6 50 6 70
E 6.70 7.00 7 30
El 3.30 3.50 3.70
e 2.30 BASIC
el 4.60 BASIC
L 0.75
0 100


RP1005S-R10-F Price
The Human Body Model has been the generally accepted ESD testing method for semiconductors. This method is also specified in MIL-STD-883, Method 3015.7 for ESD testing. The premise of this ESD test is to simulate the human body's potential to store electro-static energy and discharge it to an integrated circuit. The simulation is performed by using a test model as shown in Figure 6. This method will test the IC's capability to withstand an ESD transient during normal handling such as in manufacturing areas where the ICs tend to be handled frequently.
RP1005S-R10-F on stock

TEST LIMITS
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VIL Input low voltage, except EA, P1.6, P1.7 -0.5 0.2VDD-O.1 V
VIL1 Input low voltage to EA -0.5 0.2VDD-0.3 V
VIL2 Input low voltage to Pl.6, P1.7 -0.5 0.3VDD V
VIH Input high voltage, except XTALl, RST, P1.6, P1.7 0.2VDD+0.9 VDD+0.5 V
VIH1 Input high voltage, XTALl, RST 0.7VDD VDD+0.5 V
VOL Output low voltage, ports l, 2, 3, except Pl.6, P1.7 IOL = 1.6rflA6, 7 0 45 V
VOL1 Output low voltage, port 0, ALE, PSEN IOL = 3.2mA6, 7 0 45 V
VOL2 Output low voltage, P1.6, P1.7 IOL= 3.OmA 0 4 V
VOH Output high voltage, ports l, 2, 3, ALE, PSENo IOH= -25D:A 0.75VDD V
IIL Logical o input current, ports l, 2, 3, except Pl.6, P1.7 VIN= 0.45V -50 D:A
ITL Logical l-to-0 transition current, ports l, 2, 3, except Pl.6, P1.7 See note 5 -650 o:A
IL1 Input leakage current, port 0, EA, P1.6, P1.7 0.45V < Vi < 4.7V ±10
IDD Power supply current: Active mode @ 16MHzi, 9 ldle mode @ 16MHz2, 9 Power down mode3, 4 VDD=5.5V 32.0 6 50 mA mA
RRST Internal reset pull-down resistor 40 225 kl
Clo Pin capacitance 15 pF


Symbol Parameter Value Unit
VCEO Collector-Emitter 30 Vdc
VCBO Collector-Base Voltage 55 Vdc
VEBO Emitter-Base Voltage 3.5 Vdc
lc Collector Current 400 mA