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suppliers of RP20-123.3SF and PDF data of RP20-123.3SF

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
RP20-123.3SF recompower  New origin  08+    500 

RP20-123.3SF Datasheet

SYMBOL PARAMETER MIN MAX UNIT
twc Write Cycle Time 70
tWP Write Pulse Width 50
tcw Chip Enable to End of Write 55
tBW Data Byte Control to End of Write 55
tAS Address Setup Time O
tWR Write Recovery Time O ns
LODW R/W Low to Output High-Z 30
tOEW R/W High to Output Active 0
tDS Data Setup Time 30
tDH Data Hold Time O


RP20-123.3SF Price
Power Down In order to reduce standby power consumption, a power down mode is available. All banks must be precharged and the necessary Precharge delay (trp) must occur before the SDRAM can enter the Power Down mode. Once the Power Down mode is initiated by holding CKE low, all of the receiver cir- cuits except CLK and CKE are gated off. The Power Down mode does not perform any refresh opera- tions, therefore the device can't remain in Power Down mode longer than the Refresh period (tref) of the device. Exit from this mode is performed by tak- ing CKE "high". One clock delay is required for mode entry and exit.
RP20-123.3SF on stock
3-0 Se~ected Baud Rate (SBR) 2 1 0 Baud 0 0 0 16x o 0 1 50 0 1 0 75 0 1 1 109.92 1 0 0 134.58 1 0 1 150 1 1 0 300 1 1 1 600 0 0 0 1200 0 0 1 1800 0 1 0 2400 0 1 1 3600 1 0 0 4800 1 0 1 7200 1 1 0 9600 1 1 1 19,200