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RPC122050F Datasheet

PIN NO.	SYMBOL	NAME AND FUNCTION
1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 13, 14, 15, 16, 17 18, 19 12 23, 22, 21, 20 24	YO to Yis Eo, Ei GND Ao to A3 Vcc	outputs (active LOW) enable inputs (active LOW) ground (0 V) address inputs positive supply voltage

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Parameter	Symbol	Values	Unit
Collector-emitter voltage BC 807W BC 808W	VCEO	45 25	V
Collector-base voltage BC 807W BC 808W	VCBO	50 30
Emitter-base voltage	VEBO	5
DC collector current	c	500	mA
Peak collector current	/CM	1	A
Base current	B	1 00	mA
Total power dissipation, Ts = 1300C	Ptot	250	mW
Junction temperature	Tj	1 50	aC
Storage temperature	Tstg	- 65+150	aC

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GATE (Pin 6): The High Side Gate Drive for the External N-Channel. An internal charge pump guarantees at least 10V of gate drive for supply voltages above 20V and 4.5V gate drive for supply voltages between 9V and 20V. The rising slope of the voltage at the GATE is set by an external capacitor connected from the GATE pin to GND and an internal 10cd\ pull-up current source from the charge pump output.

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
V(BR)DSS	drain-source breakdown voltage	ID = 10 cCA VGS = 0	60	90		V
IDSS	drain-source leakage current	VDS = 48 V VGS = 0			1
+lGSS	gate-source leakage current	VDS =0 +VGS = 15 V			10	nA
VGS(th)	gate-source threshold voltage	ID =1 mA VGS = VDS	0.8		3	V
RDS(on)	drain-source on-resistance	ID = 500 mA VGS=10V		3.5	5	l
RDS(on)	drain-source on-resistance	ID = 75 mA VGS = 4.5 V			5.3	l
IYfl	transfer admittance	ID = 200 mA VDS=10V	100	200		mS
Ciss	input capacitance	VDS=10V VGS = 0 f=l MHz		25	40	pF
Coss	output capacitance	VDS=10V VGS = 0 f=l MHz		22	30	pF
Crss	feedback capacitance	VDS=10V VGS = 0 f=l MHz		6	10	pF
Switching times (see Figs 2 and 3)
ton	turn-on time	ID = 200 mA VDD = 50 V VGS = 0 t0 10V			10	ns
toff	turn-off time	ID = 200 mA VDD = 50 V VGS = 0 t0 10V			15	ns

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