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suppliers of SI-BJ-0221-3 and PDF data of SI-BJ-0221-3

Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
SI-BJ-0221-3	SENIORINDUST		N/A		219	HKGreenSystemLTD Contact:Ms.RenaCoco Tel:86-755-8279-1230 Fax:86-755-8279-1220 Email: Rena@hkgreen-system.com

SI-BJ-0221-3 Datasheet

Plug-In Catalog Number 262.002 262.005 262.010 262.015 262.031 262.050 262.062 262.100 262.125 262.200 262.250 262.300 262.400 262.500 262.600 262.700 262.750 262.800 262 001 262 01.5 262 002 262 003 262 004 262 005
SI-BJ-0221-3 Price

Symbol	Characteristic	Min	Typ.	Max	Units	Test Condition
Is	Continuous Source Current			-7.3	A	Integral reverse pn-diode
ISM	Pulsed-Source Current O			-30	A	in the MOSFET
VSD	Diode Forward Voltage O			-3.8	v	T1=250C,l=7.3A,Vcq=OV
trr	Reverse Recovery Time		80		ns	Tj=250C,IF=-9.4A
Qrr	Reverse Recovery Charge		0.22		ccC	diF/dt=lOOA/ s 0

SI-BJ-0221-3 on stock

This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.OV or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-5 0r -6), power consump- tion(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before- RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power

- With l make contact or with l break contact (changeover contact on request) - For printed circuit assembling - With PCB terminals (coil) and flat terminals (contacts) for 6.35 mm fast-on connectors - Dust-protected

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