Synchronous circuitry allows for precise cycle control triggered by a positive edge clock transition. Synchronous signals include : all Addresses, all Data Inputs, all Chip Enables (E1#, E2, E3#), Address Advance/Load (ADV), Clock Enable (CKE#), Byte Write Enables (BWa#, BWb#, BWc#, BWd#) and Read/Write (W#). Write operations are controlled by the four Byte Write Enables (BWa# - BWd#) and Read/Write(W#) inputs. All writes are conducted with on-chip synchronous self- timed write circuitry. Asynchronous inputs include Output Enable (G#), Clock (CLK) and Snooze Enable (ZZ). The HIGH input of ZZ pin puts the SRAM in the power-down state.The Linear Burst order (LBO#) is DC operated pin. LBO# pin will allow the choice of either an interleaved burst, or a linear burst. All read, write and deselect cycles are initiated by the ADV LOW input. Subsequent burst address can be internally generated as controlled by the ADV HIGH input.
SI4953DY-E3 Price| MCC Catalog Number | Device Marking | Maximum Recurrent Peak Reverse Voltaqe | Maximum RMS Voltage | Maximum DC Blocking Voltaqe |
| RL201 | | 50V | 35V | 50V |
| RL202 | | 100V | 70V | 100V |
| RL203 | | 200V | 140V | 200V |
| RL204 | | 400V | 280V | 400V |
| RL205 | | 600V | 420V | 600V |
| RL206 | | 800V | 560V | 800V |
| RL207 | | 1000V | 700V | 1000V |
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SI4953DY-E3 on stock| PARAMETER | MIN | TYP | MAX | UNIT |
| RejC Junction to case thermal resistance | | | 1 79 | 0 c/w |
| ROJA Junction to free air thermal resistance | | | 62 5 | oc/W |
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| TRUTH TABLE |
| SD | SYNC EN | IN | OUTH | OUTi |
| H | H | L | L | H |
| H | H | H | H | L |
| H | L | L | L | L |
| H | L | H | H | L |
| L | x | x | L | L |
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