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SI6435DQ-T1(3K-RL) D-C00 Datasheet
The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technol- ogy. This highly reliable process coupled with innovative circuitdesign techniques, yields high-performance and low powerconsumption devices.
SI6435DQ-T1(3K-RL) D-C00 Price
Gain levels are set by differential RS-644 gain controlinputs on the camera connector. The gain levels can be set at l, 2, 4 and 8X full-scale gain, allowing the user to easily configure the camera output to suit their application needs. Gain settings are not held after power down; proper input signals must be given at start-up, and held throughout operation for gain settings to remain at desired levels.
SI6435DQ-T1(3K-RL) D-C00 on stock

PART NUMBER PACKAGE TAPE& REEL PKG. DWG.
EL5197CW-T7 5-Pin SOT-23* 7(3K pcs) MDP0038
EL5197CW-T7A 5-Pin SOT-23* 7(250 pcs) MDP0038
EL5197ACW-T7 6-Pin SOT-23* 7 MDP0038
EL5197ACS 8-Pin SO MDP0027
EL5197ACS-T7 8-Pin SO 7 MDP0027
EL5197ACS-T13 8-Pin SO 13 MDP0027
EL5197ACSZ (See Note) 8-Pin SO (Pb-free) MDP0027
EL5197ACSZ-T7 (See Note) 8-Pin SO (Pb-free) 7 MDP0027
EL5197ACSZ-T13 (See Note) 8-Pin SO (Pb-free) 13 MDP0027


ABSOLUTE MAXIMUM RATINGS (TA = 250C UNLESS OTHERWISE NOTED}
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS 12
TA= 25C 6 5 5 2 A
Continuous Drain Current (Tj = 1500C)a TA= 70C ID 5 5 3 5
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a Is 1 5 1 0
TA= 25C PD 1 5 1 0
Maximum Power Dissipationa TA= 70C 0 96 0 64 W
Operating Junction and Storage Temperature Range Tj, Tstg -55 t0 150 oc