SI6911DQT-1 Datasheet| | | | Limits | | | Symbol | Parameter | Test conditions | Min | Typ | Max | Unit | | ICES | Collector cutoff current | VCE = VCES, VGE = OV | | | 1 | mA | | VGE(th) | Gate-emitter threshold voltage | lc = 40mA, VCE = 10V | 6 | 7 | 8 | v | | IGES | Gate leakage current | VGE = VGES, VCE = OV | | | 0 5 | | | | Collector-emitter saturation | Tj= 25IC | | | 2 1 | 3 0 | V | | VCE(sat) | voltage | Tj= 125IC | lc = 400A, VGE = 15V | | 2 4 | | | Cies | Input capacitance | | | | 70 | | | Coes | Output capacitance | VCE = 10V | | | 6 | nF | | Cres | Reverse transfer capacitance | VGE = OV | | | 1 4 | | QG | Total gate charge | Vcc = 600V, lc = 400A, VGE = 15V | | 2000 | | nC | | td(on) | Turn-on delay time | | | | 550 | | | tr | Turn-on rise time | Vcc = 600V, lc = 400A | | | 180 | | td(off) | Turn-o delay time | VGEI = VGE2 = 15V | | | 600 | ns | | tf | Turn-o fall time | RG = 0.78 I , Inductive load switching operation | | | 350 | | trr (Notel) | Reverse recovery time | IE = 400A | | | 250 | ns | | C>rr (Notel) | Reverse recovery charge | | 16 | | ccc | | VEC(Note 11 | Emitter-collector voltage | IE = 400A, VGE = OV | | | 3 8 | V | | RthO-c)Q | | IGBT part (1/2 module)'i | | | 0 046 | | | RthO-c)R | Thermal resistance | FWDi part (1/2 module f l | | | 0 085 | IC/W | | Rth(c-f) | Contact thermal resistance | Case to fin, Thermal compound Applied (1/2 module)'2 | | 0 02 | | | RG | External gate resistance | | 0 78 | | 10 | | | | | | | | | |
SI6911DQT-1 Price| | | | Limits | | | S\imbO | Parameter | Min | TVp | Max | Unit | | ICEX | Collector cutoff current | VCE=600V, VEB=2V | | | 1 0 | rnA | | ICBO | Collector cutoff current | VCB=600V, Ernitter open | | | 1 0 | rnA | | IEB | Emitter cutoff current | VEB=7V | | | 200 | mA | | VCE (satl | Collector-emitter satu ration voltage | | | | 2 0 | V | | VBE (satl | Base-emitter saturation voltage | lc=75A, IB=IA | | | 2 5 | V | | -VCE | Collector-emitter reverse voltage | -lc=75A 1diode forward voltage} | | | 1 85 | V | | hFE | DC current gain | lc=75A, VCE=2V/5V | 75/100 | | | | | ton | | | | | 2 5 | | | ts | Switching time | Vcc=300V, lc=75A, IBn =-IB2=1 5A | | | 12 | | | tf | | | 3 0 | | | Rth lj-cl0 | Thermal resistance | Transistor part | | | 0 35 | YC/W | | Rth lj-c)R | (junction to case) | Diode part | | | 1 3 | YC/W | | Rth lc-f) | Contact thermal resistance (case to fin) | Conductive grease applied | | | 0 1 5 | YC/W | | | | | | | |
SI6911DQT-1 on stock| | | | | | | | Te= 250C | | | | | | | | | | | | | | | | | | | | | | | | | | | 1 | L | | | | | | | | | | | j | | | | | | | | | | Ij | | | -_- | ID | = 100A | | | | | L | j | | | | l 70A | | | | | | | | | | 50A | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |
| | mm | inch | | DIM | MIN | TYP | MAX | MIN | TYP | MAX | | al | 0.51 | | | 0.020 | | | | B | 077 | | 1.65 | 0.030 | | 0.065 | | b | | 0.5 | | | 0.020 | | | b1 | | 025 | | | 0.010 | | | D | | | 20 | | | 0.787 | | E | | 8.5 | | | 0.335 | | | e | | 2.54 | | | 0.100 | | | e3 | | 17.78 | | | 0700 | | | F | | | 7.1 | | | 0.280 | | l | | | 5.1 | | | 0.201 | | L | | 3.3 | | | 0.130 | | | z | | | 1.27 | | | 0.050 | | | | | | | |
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