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SI7115C Datasheet

To maintain the LT6553's channel isolation, it is beneficial to shield parallel input and output traces using a ground plane or power supply traces. Vias between topside and backside metal may be required to maintain a low induc- tance ground near the part where numerous traces con- verge.
SI7115C Price

Storage Temperature	TSTG -40 t0 125	-40 t0 125	oc
Operating Temperature	Tj -40 t0 150	-40 t0 150	oc
Maximum Mounting Torque M4 Mounting Screw	12	12	in
Maximum Mounting Torque M5 Terminal Screw	17	17	in
Module Weight (Typical)	90	90	Grams
V Isolation	VRMS 2500	2500	Volts
Electrical and Thermal Characteristics, Tj =	250C unless otherwise specified
Characteristics	Symbol Test Conditions CC24_	_500N/CN24_ _500N	U nits
Blocking State Maximums
Reverse Leakage Current, Peak	IRRM Tj = 1250C, VRRM = Rated	20	mA
Conducting State Maximums
Peak On-State Voltage	VFM IFM= 50A	2 5	Volts
Switching Maximums
Reverse Recovery Time	trr IFM= 50A	200	ns
Reverse Recovery Time	di/dt = -100 A/ys, VR = 1/2 VRRM	200	ns
Thermal Maximums
Thermal Resistance, Junction-to-Case	RO(J_C) Per Module	0 6	0 C/Watt
Thermal Resistance, Case-to-Sink (Lubricated)	RO(C_S) Per Module	0 3	0 C/Watt

SI7115C on stock

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you.

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