SI7356DP-T1 Datasheet| FEATURES | | | Fast Read Access Times: 90/120/150 ns | Automatic Page Write Operation: | | Low Power CMOS Dissipation: -Active: 25 mA Max. | -1 t0 128 Bytes in 5ms -Page Load Timer | | -Standby: 150 ccA Max. | End of Write Detection: | | Simple Write Operation: -On-Chip Address and Data Latches | -Toggle Bit -DATA Polling | | -Self-Timed Write Cycle with Auto-Clear | Hardware and Software Write Protection | | Fast Write Cycle Time: | 100,000 Program/Erase Cycles | | -5ms Max | 100 Year Data Retention | | CMOS and TTL Compatible I/O | Commercial, Industrial and Automotive Temperature Ranges | | |
SI7356DP-T1 Price Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions out- side those listed in the operation sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. SI7356DP-T1 on stock| Turn-On Delay Time ID(on) = 12 mAdc, 2N5638 ID(on) = 6.0 mAdc, 2N5639 | td(on) | | 4.0 6.0 | ns | | Rise Time ID(on) = 12 mAdc, 2N5638 ID(on) = 6.0 mAdc, 2N5639 | tr | | 5.0 8.0 | ns | | Turn-Off Delay Time ID(on) = 12 mAdc, 2N5638 ID(on) = 6.0 mAdc, 2N5639 | td(off) | | 5.0 10 | ns | | Fall Time ID(on) = 12 mAdc, 2N5638 ID(on) = 6.0 mAdc, 2N5639 | tf | | 10 20 | ns | | | | | |
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