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SI74SC541P SI74SC541P SI74SC541P Datasheet

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SI74SC541P SI74SC541P SI74SC541P Price
a. Room = 25IC, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5-V leakage testing, not production tested.
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PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
DC CHARACTERISTICS
Supply Voltage VIN 2 3 6.5 V
Ground Current IDD Quiescent condition: lo = OUA 50 70 VA
Shutdown Current IDDS @25C 0.1 1 0 uA
UVLO Threshold VUV+ 1 9 2 1 2.3 V
VUV- 1 6 1 8 2.0 V
Regulation Voltage Accuracy Initial accuracy at VIN = VO + 0.5V, 10 = 10mA, Tj = 25aC -0.7 +0.7 %
VIN = VO + 0.5V t0 5.5V, lo = 10UA t0 400mA, Tj = 250C -0.8 +0.8 %
VIN = VO + 0.5V t0 5.5V, 10 = 10VA t0 400mA, Tj = -400C t0 1250C 1.8 +1.8 %
Maximum Output Current lMAX Continuous 400 mA
Internal Current Limit ILIM 470 540 750 mA
Drop-out Voltage (Note 6) VD01 10 = 400mA; 2.5V i VO i 2.8V 250 400 mV
VD02 10 = 400mA; 2.8V < VO 200 325 mV
Thermal Shutdown Temperature TSD+ 145 oC
TSD_ 110 oC
AC CHARACTERISTICS
Ripple Rejection (Note 5) 10 = 10mA, VIN = 2.8V(min), VO = 1.8V
@1kHz 75 dB
@ 10kHz 60 dB
100kHz 40 dB
Output Noise Voltage (Note 5) 10 = 100pA, VO = 1.5V, TA = 25aC BW = 10Hz t0 100kHz 40 ¨Vrms
DEVICE START-UP CHARACTERISTICS
Device Enable TIme TEN Time from assertion of the ENx pin to when the output voltage reaches 95% of the VO (nom) 250 500 US
LDO Soft-start Ramp Rate TSSR Slope of linear portion of LDO output voltage ramp during start-up 30 60 hisN


1) Address assignment: The clock driver in this specification uses the single, 7-bit address shown below. All devices can use the address if only one master clock driver is used in a design. The address can be re-used for the CKBF device if no other conflicting I2C clock driver is used in the system.