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suppliers of SI8926 and PDF data of SI8926

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
SI8926 SI  SMD-8  08+    1350 
    Seatron Intl (HK) Trading Limi..
  • Contact:Eric
  • Tel:86-755-83514455
  • Fax:86-755-25324220
  • Email: seatron04@gmail.com
SI8926 SI  SMD-8  05+    3000 
    GD TECH UK
  • Contact:gdtechuk
  • Tel:44-870-4866758
  • Fax:44-1212402714
  • Email: gdtechuk@gmail.com


SI8926 SI  SMD-8  最新批号    2500 
    shenzhen kehao electronic co.,..
  • Contact:FENG
  • Tel:86-755-61337579
  • Fax:86-755-61337511`
  • Email: xinda288@yahoo.com.cn
SI8926 SI  SMD-8  06+    2800 
    H K SKY Electronics.Co.,Ltd
  • Contact:Tanya
  • Tel:86-755-83761685
  • Fax:86-755-83761231
  • Email: tanyaguo@sky-ic.com
SI8926 SI  SMD-8  08+  最新供应  5000 
    BEIJING YUANKUN UNIVERSE TECHN..
  • Contact:liu
  • Tel:86-10-62104791
  • Fax:
  • Email: sales@yuankun24.com
SI8926 SI  SMD-8  07+  NEW  1350 
    Dayue (HK) Trade Limited
  • Contact:Zhao
  • Tel:86-755-8301-3240
  • Fax:86-755-8304-1894
  • Email: Mike-hk@dayue-hk.com


SI8926 SI        2350 
    E-Zone International (HK) Co.,..
  • Contact:Ella
  • Tel:86-755-8339-1755, 8326-7835
  • Fax:86-755-8339-1772
  • Email: sales1@ez-international.cn
SI8926 SI  SMD-8  07+/08+    5,000 
SI8926 SI    2350     

SI8926 Datasheet

IF(AV) 3A
VRRM 150 V
Tj (max) 1750C
VF(max) 0.66V


SI8926 Price
and applies the appropriate drive to the P-channel pass transistor. If the feedback voltage is lower than the refer- ence, the pass-transistor gate is pulled lower, allowing more current to pass and increasing the output voltage. If the feedback voltage is too high, the pass-transistor gate is pulled up, allowing less current to pass to the output.
SI8926 on stock

Pin Name Pin Function
CLK System Clock
cs Chip Select
CKE Clock Enable
AoA12 Address
BAo_ BAi Bank Select Address
RAS Row Address Strobe
CAS Column Address Strobe
WE Write Enable
L(U)DQM Data Input/Output Mask
DQo15 Data Input/Output
VDDNss Power Supply/Ground
VDDoNssa Data Output Power/Ground


Drain-source breakdown voltage /D = 10 pA, VGIS = 0 V, VG2S = OV V(BR)DS 1 2 V
Gatel-source breakdown voltage +/GIS = 10 mA, VG2S = 0 V, VDS = 0 V +V(BR)GISS 6 1 5
Gate2-source breakdown voltage +/G2S = 10 mA, VGIS = 0 V, VDS = 0 V +V(BR)G2SS 6 1 5
Gatel-source leakage current VGIS = 6 V, VG2S = OV +/GISS 50 UA
Gate2-source leakage current VG2S = 8 V, VGIS = 0 V, VDS = 0 V +/G2SS 50 nA
Drain current VDS = 5 V, VGIS = 0 V, VG2S = 4.5 V /DSS 1 0 UA
Drain-source current VDS = 5 V, VG2S = 4 V, RGl = 60 kQ, amp. A VDS = 5 V, VG2S = 4 V, RGl = 50 kQ, amp. B /DSX 1 4 1 4 mA
Gatel-source pinch-off voltage VDS = 5 V, VG2S = 4 V, /D = 20 pA 1S(p) 0.7 V
Gate2-source pinch-off voltage VDS = 5 V, /D = 20 pA VG2S(p) 0.6