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SI900DN Datasheet

Ratings Symbol 2N6249 2N6250 2N6251 Units
Collector-Emitter Voltage VCEO 200 275 350 Vdc
Collector-Base Voltage VCBO 300 375 450 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current Ic 10 Adc
Base Current IB 5.0 Adc
Total Power Dissipation @ TA = +250C (1) @ Tc = +25DC (2) PT 5.5 175 W W
Operating & Storage Temp Range Top, Tstg -55 to +200 oC


SI900DN on stock
Read Cycle Time tRC Add ress Access Time tAA Chip Select Access Time tACS Output Enable to Output Valid tOE Output Hold from Address Change tOH Chip Selection to Output in Low Z tCLZ Output Enable to Output in Low Z tOLZ Chip Deselection to Output in High 2(3) tCHZ Output Disable to Output in High 2(3) tOHZ

IN;liic'rt Ta-IF(A\O Derating VF-IF CharacteristiCS(Typical) IFMS Rating
S S j >__
oJ 3c ' 1 20ms l
0 8 < h/y~ 25
o oe - 1.0 j
o cj 0.5 0 2C a) j
0 4 f |j 15
0 2 o LL j7 jf J | 1c LL
j 0.1 5
0 25 50 75 100 125 150 0 5 0.6 0.7 0.8 0.9 1.0 1.1 1 5 10 50 Ambient Temperature Ta (1C) Forward Voltage VF (V) Overcurrent Cycles