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SI9100SN SI9100SN SI9100SN Price| SYMBOL | CHARACTERISTIC | VALUE | UNITS |
| VCEO* VEB* VCB* | Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage | 80 7.0 80 | Vdc Vdc Vdc |
| lc* lc* IB* | Peak Collector Current Continuous Collector Current Base Current | 1 0 4.0 2.0 | Adc Adc Adc |
| TSTG* TJ* | Storage Temperature Operating Junction Temperature | -65 t0 200 -65 t0 200 | oC oC |
| PD* 0 JC | Total Device Dissipation Tc = 250C Derate above 25aC Thermallmoedance | 25 0.143 7 | Watts W/oC oC/W |
| | | |
SI9100SN SI9100SN SI9100SN on stock| Parameter | Symbol | Limits | Unit |
| Collector-base voltage | VcB | 100 | V |
| Collector-emitter voltage | VCE | 60 | v |
| Emitter-base voltage | VEB | 5 | V |
| Collector current | lc | 12 | A |
| 20 | A(Pulse) |
| | | 2 | W |
| Collectorpowerdissipation | Pe | 25 | W(Tc=250C) |
| | Tj | 150 | oc |
| Storage temperature | Tstg | 55 - +15 | oc |
| | | |
| DIM | mm | Tol | I ¨nches | Tol. |
| A | 16.51 | 0 25 | 0 650 | 0.010 |
| B | 6.35 | 0 13 | 0 250 | 0.005 |
| C | 450 | 5 | 450 | 5 |
| D | 3.30 | 0 13 | 0 130 | 0.005 |
| E | 18.92 | 0 08 | 0 745 | 0.003 |
| F | 1.52 | 0 13 | 0 060 | 0.005 |
| G | 2 .16 | 0 13 | 0 085 | 0.005 |
| H | 14.22 | 0 08 | 0 560 | 0.003 |
| l | 1.52 | 0 13 | 0 060 | 0.005 |
| J | 6.35 | 0 13 | 0 250 | 0.005 |
| K | 0 .13 | 0 03 | 0 005 | 0.001 |
| M | 5.08 | 0 51 | 0 200 | 0.020 |
| N | 1.27 X 45 | 0 13 | 0.050 X 45 | 0.005 |
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