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SI9113DY-T1 SI9113DY-T1 SI9113DYT1 Datasheet

ID= 26A VDS 2 160V
VDS = 100\t- VDS = 40V- 7
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SI9113DY-T1 SI9113DY-T1 SI9113DYT1 Price
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector Cut-off Current iCBO VCB = 100 V, IE = 0 1 A
Emitter Cut-off Current IEBO VEB = 7 V, IC = 0 1 uA
Collector-Emitter Breakdown Voltage V (BR) CEO IC = 10 mA, IB = O 80 V
DC Current Gain hFE (1) (Note) VCE = 1V, IC = 1A 70 240
nFE(2) VCE = 1V, IC = 3A 40
Collector-Emitter Saturation Voltage VCE (sat) IC = 3 A, IB = 0.15 A O2 0.4 V
Base-Emitter Saturation Voltage VBE (sat) Ic = 3 A, IB = 0.15 A 0.9 1.2 V
Transition Frequency fT VCE = 4 V, IC = 1A 120 MHz
Collector Output Capacitance Cob VCB = 10 V, IE = O, f = 1MHz 80 pF
Turn-on Time ton 20}#s ~NUT ~B , r 0.2
Switching Time Storage Time tstg V( 1O S
Fall Time tf IBl = -IB2 = 0.15 A, DUTY CYCLE < lo/o O1


Freq(MHz) lsi,l /Sll l S21l /S21 l S12l /S12 l S22l /S77
50 0.781 -63.1 22.825 146.1 0.036 59.1 0.825 -3 8.9
100 O765 -102.5 1 7.041 125 6 0.053 44.0 0.617 -63.6
150 O755 -124.3 12 823 113.8 0 060 37.9 0 481 -80.1
200 O749 -137.4 10.134 106 3 0.065 33.3 0.400 -89.9
250 O750 -146.2 8.276 101 2 0.067 3 1.3 0.347 -99.5
300 O748 -152.4 7.003 97.3 0.068 3 1.5 0.313 -105.1
350 O747 -157.1 6.126 93.7 0.071 33.2 0.293 -111.8
400 O747 -160.7 5 337 91.3 0 072 32.7 0 274 -116.3
450 O747 -163.4 4 806 88.7 0 076 33.3 0 262 -119.8
500 O746 -166.2 4.305 86.5 0.076 35.7 0.256 -124.2