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SI9120DYT1-01 SI9120DYT1-01 SI9120DYT101 Datasheet

CAUTION: These devices are sensitive to electrostatic discharge; follow proper lC Handling Procedures. 1-888-INTERSIL or 321-724-7143 I Intersil (and design) is a registered trademark of Intersil Americas Inc. XDCP is a trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2004. All Rights Reserved All other trademarks mentioned are the property of their respective owners.
SI9120DYT1-01 SI9120DYT1-01 SI9120DYT101 Price

Parameters	30CTQ	Units	Conditions
Tj Max. Junction Temperature Range	-55 t0 175	oc
Tstg Max. Storage Temperature Range	-55 t0 175	oc
RthjC Max. Thermal Resistance Junction to Case (Per Leg)	3 25	0 c/w	DC operation * See Fig. 4
RthjC Max. Thermal Resistance Junction to Case (Per Package)	1 63	0 c/w	DC operation
Rtrics TypicaIThermal Resistance, Case to Heatsink	0 50	0 c/w	Mounting surface , smooth and greased
wt Approximate Weight	2 (0.07)	g(oz)
T MountingTorque Min.	6(5)	Kg-cm
Max.	12 (10)	(lbf-in)

SI9120DYT1-01 SI9120DYT1-01 SI9120DYT101 on stock

Parameter	10RIA	Units	Conditions
PGM Maximum peak gate power	8 0	W	Tj= Tj max
Prt^,,, Maximum average gate power G(AV)	2 0	W	Tj= Tj max
IGM Max. peak positive gate current	1 5	A	Tj= Tj max
-VGM Maximum peak negative gate voltage	10	V	Tj= Tj max
IGT DC gate current required to trigger	90 60 35	mA	Tj = - 650C Max. required gate trigger current/ are the lowest value which Tj= 250C willtat9-ggac[r all units 6V anode-to- Tj = 1250C cathode applied
VGT DC gate voltage required to trigger	3 0 2 0 1 0	V	Tj = - 650C Tj = 250C Tj = 1250C
IGD DC gate current not to trigger	2 0	mA	Tj = Tj max., VDRM = rated value
VGD DC gate voltage not to trigger	0 2	V	Tj = Tj max. Max. gate current/ voltage not to trigger is the max. value which VDRkn = rated value will not trigger any unit with rated VDRM anode-to-cathode applied

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