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SI9169BQ T1 SI9169BQ T1 SI9169BQT1 Datasheet

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REFER TO PAGE 5-1
The WS27C010L is programmed using Algorithm E shown on page 5-11. (This product can also be programmed by using National Semiconductor's 27C010 Programming Algorithm.)


SI9169BQ T1 SI9169BQ T1 SI9169BQT1 Price

Symbol Parameter Value Unit
VDD Supply Voltage 3 t0 20 V
VI Input Voltage 0 to VDD V
Top Operating Temperature -55 t0 125 oC


SI9169BQ T1 SI9169BQ T1 SI9169BQT1 on stock
DEFINITIONS VF = Instantaneous forward voltage (pw = 300as, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of to + tb. to = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9) QRR = Reverse recovery charge. cJ = Junction Capacitance. RejC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle.

50 L 34 L
Theoretical electrical travel 25 mm 25 mm
(TET =E) 300 mm 450 mm
in increments of 25 mm