SID2506A-01 Datasheet| Parameter | Min | Typ | Max | Units | | Input Power Dissipation Input Control Current Peak (10ms) Reverse Input Voltage Total Power Dissipation Isolation Voltage Input to Output Operational Temperature Storage Temperature Soldering Temperature DIP Package Flatpack/Surface Mount Package (10 Seconds Max.) | 3750 -40 -40 | | 1501 50 1 5 8002 +85 +125 +260 +220 | mW mA A V mW VRMS oC oC oC oC | | | | | |
SID2506A-01 Price| SYMBOLS | PARAMETERS AND CONDITIONS | UNITS | MIN. | TYP | MAX. | | ICBO | Collector Cutoff Current at VCB = 5 V, IE = 0 (Q1 thru Q6) | oA | | | 1 0 | | IEBO | Emitter Cutoff Current at VEB = 1 V, le = 0 (Q4 thru Q6) | oA | | | 1 0 | | hFE | Direct Current Amplification at VCE = 3 V, le = 5 mA (Q4 and Q6) | | 40 | 100 | 250 | | CCB | Collector to Base Capacitance at VCB = 3 V, f = 1 MHz (Q3, Q5, Q6) | pF | | 0 9 | 1 8 | | CEB | Emitter to Base Capacitance at VEB = 0, f = 1 MHz (Q4 thru Q6) | pF | | 1 4 | 2 8 | | Ccs | Collector/Substrate Capacitance, Vcs = 3 V, f = 1 MHz (Q3, Q5, 06) | pF | | 1 4 | 2 8 | | fT | Gain Bandwidth Product* at VCE = 3 V, le = 10 mA | GHz | | 9O | | | | | | | |
SID2506A-01 on stock| Parameter | Symbol | Ratings | Unit | | Rating | Collector to base vohage | VCBO | 50 | V | | of | Collector to emitter voltage | VCEO | 50 | V | | element | Collector current | Ic | 100 | mA | | | TotaJ power dissipation | PT | 300 | mW | | Overall | Junction temperature | Tj | 150 | C | | Storage temperature | T,tg | 55t0 +150 | C | | | | | |
| Parameter | Symbol | Min | Typ | Max. | Unit | Conditions | | Gate-source leakage | IGSS | | | +10 | LIA | VGs=+12V / VDs=OV | | Drain-source breakdown voltage | V(BR) DSS | 30 | | | V | ID=lmA, /VGs=OV | | Zero gate voltage drain current | IDSS | | | 1 | yA | VDs=30V / VGs=OV | | Gate threshold voltage | VGSfthl | 0.5 | | 1.5 | V | VDs=lOV /ID=lmA | | | | | 71 | 100 | mQ | ID=2.OA, VGs=4.5V | | Static drain-source on-state resistance | RDS (on)" | | 76 | 107 | mQ | ID=2.OA, VGs=4V | | | 110 | 154 | mQ | ID=2.OA, VGs=2.5V | | Forward transfer admittance | Yfs 8 | 1.5 | | | S | VDs=lOV, ID=2.OA | | Input capacitance | Ciss | | 175 | | pF | VDs=lOV | | Output capacitance | Coss | | 50 | | pF | VGs=OV | | Reverse transfer capacitance | Crss | | 25 | | pF | f=lMHz | | Turn-on delay time | td(on) 8 | | 8 | | ns | ID=1 .OA | | Rise time | tr 8 | | 10 | | ns | VDD-15V | | Turn-off delay time | td(off)8 | | 21 | | ns | VGs=4.5V RL=15Q | | Fall time | tf 8 | | 8 | | IIS | RGS=IOQ | | Total gate charge | Qg | | 2 8 | 3.9 | nC | VDD-15V | | Gate-source charge | Qgs | | 0.6 | | nC | VGs=4.5V | | Gate-drain charge | Qgd | | O8 | | nC | ID=2.OA | | | | | | | |
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