SIEMENSB58290 Price| PARAM ETER | SYM BOL | MIN | TYP | MAX | UNIT | CON DITIONS | | STATIC | | Drain-source breakdown voltage | V(BR)DSS | 30 | | | V | ID= 250vA, VGS=OV | | Zero gate voltage drain current | IDSS | | | 1 0 | LLA | VDS=30V, VGS=OV | | Gate-body leakage | IGSS | | | 100 | nA | VGS=+20V, VDS=OV | | Gate-source threshold voltage | VGS(th) | 1 0 | | 3 0 | V | ID= 250liA, VDS=VGS | | Static drain-source on-state resistance (1) | RDS(on) | | | 0 12 0 18 | n n | VGS= 10V, ID= 2.5A VGS= 4.5V, ID= 2.OA | | Forward transconductance (1) (3) | 9fs | | 3 5 | | S | VDS=4.5V, ID= 2.5A | | DYNAMIC (3 J | | Input capacitance | ciss | | 190 | | pF | | | Output capacitance | coss | | 38 | | pF | VDS= 25V, VGS=OV f=lMHz | | Reverse transfer capacitance | Crss | | 20 | | pF | | SWITCHIN G(2) (3) | | Turn-on-delay time | td(on) | | 1 7 | | ns | | | se time | tr | | 2 3 | | ns | VDD= 15V, ID= 2.5A | | Turn-off delay time | td (off) | | 6.6 | | ns | RG 6.002, VGS= 10V | | Fall time | tf | | 2 9 | | ns | | Total gate charge | Qg | | 3 9 | | nC | | | Gate-source charge | Qgs | | 0 6 | | nC | VDS= 15V, VGS= 10V lD= 2.5A | | Gate drain charge | Qgd | | 0 9 | | nC | | SOU RCE-DRAIN DIODE | | Diode forward voltage (1) | VSD | | | 0 95 | V | Ti=250C, Is= 1.7A, VGS=OV | | Reverse recovery time (3) | trr | | 17 7 | | ns | Tj=250C, Is= 2.5A, | | Reverse recovery charge (3) | Qrr | | 13 0 | | nC | di/dt=lOOA/ys | | | | | | | |
SIEMENSB58290 on stock| )tical Test Signa I diode TSAL6200 | I , IF = 0.4 A, 30 pulse II | Sf=f0T= | 0 IT | | + | | t | | LDI | | | | |
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