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SIGC11T60SNC Datasheet

Dieses Produkt wurde fur den Einsatz im explosi- onsgetahr-deten Bereich in der Schutzart Eigen- sicherheit nach EN 50014 und EN 50020 entwickelt und zugelassen. Die Eigensicherheit ist nur in Zusammenschal- tung mit einem entsprechend zugehorigen Be- triebsmittel und gemaB dem Nachweis der Eigensicherheit gewahrleistet. Die Baumusterprutbescheinigung und die fur die Verwen-dung bzw. den geplanten Einsatzzweck zutreffenden Gesetze bzw. Richtlinien sind zu beachten.
SIGC11T60SNC Price

Unique silicon technology developed by International Rectifier forms the heart of the PVD. The monolithic BOSFET contains a bidirectional N-channel power MOSFET output structure. In addition, this power IC chip has input circuitry for fast turn-off and gate pro- tection functions. This section of the BOSFET chip utilizes both bipolar and MOS technology to form NPN transistors, P-channel MOSFETs, resistors, di- odes and capacitors. The photovoltaic generator similarly utilizes a unique International Rectifier alloyed multijunction structure. The excellent current conversion efficiency of this technique results in the very fast response of the PVD microelectronic power lC relay.
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PIN		NAME	FUNCTION
SOT23-6	so	NAME	FUNCTION
1.2	3	GND	Ground
3	1	Vcc	Supply Voltage Input. Bypass to GND with a O.1UF capacitor.
4	8	RS+	Power-Side Connection to the External Sense Resistor
5	6	RS-	Load-Side Connection for the External Sense Resistor
6	4	OUT	Voltage Output. VOUT iS proportional to VSENSE ( VRS+ - VRS- ). Output impedance is approximately 12kl .
	2,5,7	NC	No Connection. Not internally connected.

s Overview The AN5295NK is a television-use 3-ch. sound sig- nal processing IC which incorporates volume, tone con- trol (L/R/C 3-ch.), and surround sound, sound AGC, lower sound enforce (L/R 2-ch.) functions. All ofthe func- tions (including changeover switch) including external I/ O port can be controlled by I2C bus.

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