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SIGC144T170R2C Datasheet

i=					Ciss
	1
	1					5
		L			OS
		l		N
			L1	l l l l Crss
- Tch = 250C				r
-f =1MHz VGS = OV

SIGC144T170R2C Price

The information contained herein is the exclusive property of Prime View International Co., Ltd. and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of Prime View International Co., Ltd. Page:2
SIGC144T170R2C on stock

N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means ofdiffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal

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