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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
SIGNETICS	ME005A	BR24C16FV-	ELANSC520-133AC		350	Romate Semiconductor Co.,Ltd Contact:Owen Tel:86-755-82724433 Fax:86-755-8273-6777 Email: owen@romate.cn

SIGNETICS Datasheet

	Parameter		Units
ID @ VGS = -10V, TC = 250C	Continuous Drain Current	-11	A
ID @ VGS = -10V, TC = 1000C	Continuous Drain Current	-7.0
IDM	Pulsed Drain Current	-44
PD @TC= 25C	Max. Power Dissipation	75	W
	Linear Derating Factor	0.6	W/oC
VGS	Gate-to-Source Voltage	+20	V
EAS	Single Pulse Avalanche Energy	135	mJ
IAR	Avalanche Current	-6.6	A
EAR	Repetitive Avalanche Energy	7.5	mJ
dv/dt	Peak Diode Recovery dv/dt	12	V/ns
Tj TSTG	Operating Junction Storage Temperature Range	-55 t0 150	oC
	Lead Temperature	300 (0.063in./1.6mm from case for 10sec)	oC
	Weight	4.3 (Typical)	g

SIGNETICS Price

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SIGNETICS on stock

The device assures a fast protection against load over current and load over/under voltage. An inter- nal crowbar is provided turning on the low side mosfet if an over-voltage is detected. In case of over-current, the system works in Con- stant Current mode until UVP

l-Wire Interface (Pulse Mode, Figure 4) In l-wire pulse mode, each rising edge at CLK increments the upper six bits of the DAC register by one count. When incremented beyond 11111100B, the counter rolls over and sets the DAC to the minimum value (OOOOOOOOB). In this way, a single pulse applied to CLK increases the DAC output by a single 4LSB step and 63 pulses decrease the

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