| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| SII3124-1CB364 | SILICONI | 08+ | 1000 |
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| SII3124-1CB364 | Silicon imag | N/A | Please contact Mr. G | 06+ |
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| SII3124-1CB364 | SILICONI | . | . | 100 |
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| SII3124-1CB364 | SILICONI | 07+ | 500 |
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| SII3124-1CB364 | SILICONI | QFP |
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| SII3124-1CB364 | SILICONI | . | . | 100 |
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| SII3124-1CB364 | SILICONI | QFP | 07+ | 500 |
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| SII3124-1CB364 | 25 |
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| SII3124-1CB364 | SILICONI | QFP | 07+ | 25 |
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| SII3124-1CB364 | Silicon Imag | BGA | 05+ | ■■价格绝对优势■■批发零售，欢迎咨询★ | 1652 |
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| SII3124-1CB364 | SILICONI | 06+ | 150 |
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| SII3124-1CB364 | SILICONI | 2007+ | 2800 |
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| SII3124-1CB364 | SILICONI | 100 |
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| SII3124-1CB364 | SILICONI | 06+ | 500 |
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| SII3124-1CB364 | SILICONI | QFP |
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| SII3124-1CB364 | Silicon Imag | new | 2005 | BGA |
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| SII3124-1CB364 | SILICONI | 25 |
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| SII3124-1CB364 | SILICONI | . | . | 100 |
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SII3124-1CB364 Datasheet Drain to Source Voltage (Note l) Drain to Gate Voltage (RGS = 20k I ) (Note l) . Continuous Drain Current . . . . . . Pulsed Drain Current (Note 3) . . . Gate to Source Voltage . . . . . . . . Maximum Power Dissipation . . . . Linear Derating Factor . . . . . . . . . Operating and Storage Temperature . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334 . . SII3124-1CB364 Price i - - L n c t ) C \ J - l - - L n c t ) C \ J c o o C \ J O l - . L n C t ) C \ J O ( S T i ) 1 1 ' S l ' u o l 1 A I I I O N I H O I I M S SII3124-1CB364 on stock ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD7476/AD7477/AD7478 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
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