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SII9133CBHU Datasheet

Limits
S,/m bol Parameter Test conditions Min yp Max U nit
ICEX Collector cutoff current VCE=1200V, VEB=2V 1 0 mA
ICB Collector cutoff current Vce=1200V, Emitter open 1 0 mA
IEB Emitter cutoff current VEB=7V 50 mA
VCE (sat) Collector-emitter saturation voltage 1 0 V
VBE lsat) Base-emitter saturation voltage lc=3A, lB=0 6A 1 5 V
hFE DC current gain lc=3A, VCE=1V 5
1 0
ts Switching time Vcc=600V, lc=3A, lel=0 6A, -IB2=l.2A 4 0
tf 0 8
Rtri(l cl Q Thermal resistance Transistor part 1 25 IC/W
Rtri (j-c) R (junction to case) Diode part IC/W
RtH (c-tl Contact thermal resistance (case to finl Conductive grease applied 0 5 IC/W


SII9133CBHU Price
Stripline Packaged Schottky Mixer Diodes These stripline packaged Schottky barrier mixer diodes are suitable for use in stripline and microstrip mixers. Each family of diodes is listed by barrier height, increasing fre- quency capability, and grouped according to package style and noise figure. The forward l-V characteristics of Schottky diodes are dependent on the barrier voltage of the metal. The barri- er voltage affects the local oscillator requirement for opri- mum RF performances. M/A-COM offers low, medium and high barrier Schottky mixer diodes. Elearical charaaeristics and packaging other than the stan- dard specifications listed, may be available upon request. For more information, contaa the faaory.

DIMENSION MINIMUM NOMINAL MAXIMUM
A 086[2.184] 100[2.540]
Al 0051 12701 0081 20321 011[.2794]
b 017[.4318] 0201 50801 023[.5842]
007[.1778] 0081 20321 009[.2286]
D 195[4 953] 200[5.080] 205[5.207]
E 135[3.429] 140[3.556] .145[3.68 3]
El 155[3.937] 160[4.064] 165[4.191]
e 050[1 270]
L 020[.5080] 040[1.016]
Ll 055[1.397] 065[1.651] 075[1.905]
ac O' 8'