TIMap-8  > SIL10.91KG

suppliers of SIL10.91KG and PDF data of SIL10.91KG

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
SIL10.91KG VISHAYSFERNI    N/A    3000 

SIL10.91KG Datasheet
These latches are ideally suited for use as temporary storage for binary information between processing units and input/output ar indicator units. Information present at a data {DJ input is transferred to the Q output when the enable (C) is high and the Q output will follow the data input as long as the enable remains high. When the enable goes low, the information lthat was present at the data input at the time the transition occurred) is retained at the Q output until the enable is permitted to go high. The 75 and 'LS75 feature complementary Q and Q outputs from a 4-bit latch, and are available in various 16-pin packages. For higher component density applications, the '77 and LS77 4-bit latches are availabte in 14-pin flat packages.
SIL10.91KG Price
Output Capacitors The minimum required output capacitance is 660pF (organic/polymer), or l,200 (aluminum electrolytic) with a maximum ESR less than or equal t0 50ml . Failure to observe this requirement may lead to regulator instabil- ity or oscillation. Electrolytic capacitors have poor ripple performance at frequencies greater than 400kHz, but excellent low frequency transient response. Above the ripple frequency ceramic decoupling capacitors are nec- essary to improve the transient response and reduce any microprocessor high frequency noise components apparent during higher current excursions. Preferred low ESR type capacitor part numbers are identified in the Table l below.

2UU b(J
Cn 180
E 160 7) 140 u- 40 a
C 120 | g3 30 LISS
t; 10C IS18 C
| '~ 20
8 60 l
cn c 4C l, | | (J 10 Coss
0 1 2 3 4 5 6 7 8 9 10 VGs-Gate Source Voltage (Volts) Transconductance v gate-source voltage 0 10 20 30 40 50 VDs-Drain Source Voltage (Volts) Capacitance v drain-source voltage
16 V )D=2 ov 30V 50v
14 z lD:800 nA
0 12 10
> 8 § e (2 g 2 j
~ u0 02 0.4 06 08 10 1.21.4 16 1.8 20 22 24 Cl-Charge (nC) Gate charge v gate-source voltage