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SIL41A12 Datasheet

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SIL41A12 Price

Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current lCBO VCB = 1500 V, IE = 0 1 mA
Emitter cut-off current IEBO VEB = 5 V, lC = 0 10 uA
Collector-emitter breakdown voltage V(BR) CEO lc = 10 rTiA, lB = 0 700 V
hFE (1) VCE = 5 V, lC = 2 A 20 50
DC current gain hFE (2) VCE = 5 V, lC = 10 A 8 17
hFE (3) VCE = 5 V, lC = 17 A 4 8 8 3
Collector-emitter saturation voltage VCE (sat) lc =17 A, lB = 4.25 A 3 V
Base-emitter saturation voltage VBE (sat) lc =17 A, lB = 4.25 A 1 0 1 5 V
Transition frequency fT VCE = 10 V, lC = 0.1 A 2 MHz
Collector output capacitance Cob VCB=lOV,IE=O,f=lMHz 280 pF
Storage time tstg(1) ICP = 8 A, IBl (end) = 1.4 A, 2 5 3
Fall time tf (1) fH = 64 kHz 0.15 0 3
Switching time Storage time tstg(2) ICP = 8 A, IBl (end) = 1.1 A, 1 6 1 8 US
Fall time tf (2) fH = 100 kHz 0 1 0.15


SIL41A12 on stock

Item Symbol Condition mi'n. typ max. Unn
L IEBO . VEB='2 V, Ic= 0 2 A
j p3· VCBO ' Ic=100A, IE= 0 30 V
hFE VCE=10V, Ic= 2 mA 100 350
111· VCE (sat) Ic=20mA, IB= 4 mA O5 N 'I
·- VBE VCB-10V, IE=_ 2 mA O7 V j
}7 fT VCB=10V, IE=-15mA, f-200MHz O8 1.3 1.9 GHz i
j L Cob VCB=10V, IE= O, f= 1MHz , 0.6 1 1.4 pF
Crb VCB= 6 Vt IE= O, f='l MHz 0.4 pF -
PG VCB=lOVt IE=-lOmA, f:200MHz 14 18 22 dBr


FEATURES . Adoption ofMBIT Processes. . Large Current Capacitance. . Low Collector-to-Emitter Saturation Voltage. . High Speed Switching. . Ultrasmall Package facilitates miniaturization in end products . High Allowable Power Dissipation. . Complementary to KTC3544T.