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suppliers of SIL504 and PDF data of SIL504

Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
SIL504			07+		20000	shenzhen anywiser technology c.. Contact:lemon Tel:86-755-28049536 Fax: Email: lemon@anywiser.cn

SIL504 Datasheet

Layout. Careful consideration must be given to PCB layout when designing high-frequency, fast-switching, high-current circuits. 1) The analog ground (AGND), the power ground (PGND), and the high-current return of the external MOSFETs (the negative side of the sense resistor) should return separately to the negative side of the motor supply filtering capacitor. This will minimize the effect of switching noise on the device logic and analog reference. 2) Minimize stray inductances by using short, wide copper runs at the drain and source terminals of all power MOSFETs. This includes motor lead connections, the input power buss, and the common source of the low-side power MOSFETs. This will minimize voltages induced by fast switching of large load currents.
SIL504 Price

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
VBR(CES)	Collector-Emitter Breakdown Voltage	lc = 250 ccA VGE = 0	600			V
ICES	Collector cut-off (VGE = 0)	VCE = Max Rating Tj = 25 0C VCE = Max Rating Tj = 125 0C			10 100	ccA ccA
IGES	Gate-Emitter Leakage Current (VCE = 0)	VGE = +20 V VCE = 0			±100	nA

SIL504 on stock

PARAMETER	SYMBOL	VALUE	UNIT
Supply Voltage	Vcc	2O5.5	V
Input Voltage	VIN	O5.5	V
Output Voltage	VOUT	OVcc	V
Operating Temperature	Topr	- 4085	C
Input Rise and Fall Time	dt/dv	0100 (Vcc = 3.3 +0.3V) 020 (Vcc = 5 +0.5V)	nsN

In the S-24C04A, "AO" does not exist in the slave addresses. So, "AO" becomes "PO." "PO" is a page address bit and is equivalent to an additional uppermost bit of the word address. Accordingly, when PO="O," the former half area corresponding t0 2 kbits (addresses from OOOh to OFFh) in the entire memory are selected; when PO="1," the latter half area corresponding t0 2 kbits (addresses from 100h t0 1FFh) in all areas of the memory are selected.

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