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SIOV-3225K60G SIOV-3225K60G SIOV3225K60G Datasheet

Parameter Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 3 v
Collector current Ic 15 mA
Collector power dissipation PC 150 mW
Junction temperature Ti 150 C
Storage temperature Tstg -55+150 C


SIOV-3225K60G SIOV-3225K60G SIOV3225K60G Price
This device is designed to deliver the best combination of jitter performance and power dissipation by using a fully differential signal architecture and low-noise design techniques. Input Amp Iifier Input amplifiers are implemented for both the main data and system loopback inputs. These amplifiers accept a differential input amplitude from 50mVp-p up to
SIOV-3225K60G SIOV-3225K60G SIOV3225K60G on stock
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other- wise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

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