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For the synchronous MOSFET Q2, Rdscon; is an im- portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the con- trol lC so the gate drive losses become much more significant. Secondly, the output charge Qu;; and re- u oss verse recovery charge Qrr both generate losses that u rr are transfered to Ql and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs' susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions be- tween ground and V .As Ql turns on and off there is in a rate of change of drain voltage dV/dt which is ca- pacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgsl must be minimized to reduce the potential for Cdv/dt turn on.