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ST92F150DV9QB Datasheet
1.2.3 Device class desiqnator. This device class designator shall be a single letter identifying the product assurance level. Alllevels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K and E) or QML Listing (Class G and D). The product assurance levels are as follows:
ST92F150DV9QB Price

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ST92F150DV9QB on stock
The high-speed programming mode is set by applying 12.75 V (progranuning voltage) to the Vpp pin when the VCC is 6.25 V. After the address and data are fixed, the data in the address is written by applying O.lms oflow level program pulse to P~M pin* Then verify ifthe data is written. If the programmed data is incorrect, another 0.1 ms pulse is applied to p pin. This programming procedure is repeated until correct data is read from the address (maximum of 25 times). Subsequently, all data are programmed in all addresses. When all data were written, verify all address under the condition ofVcc = VPP = 5 V.

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
Gp power gain f= 50 MHz 19.5 20 20.5 dB
f= 860 MHz 20 21 dB
SL slope cable equivalent f = 40 t0 860 MHz 0.2 1.1 2 dB
FL flatness of frequency response f = 40 t0 860 MHz +0.2 +0.5 dB
S11 input return losses f = 40 t0 80 MHz 20 28 dB
f= 80 t0 160 MHz 18.5 23 dB
f= 160 t0 320 MHz 17 20 dB
f = 320 t0 640 MHz 15.5 20 dB
f = 640 t0 860 MHz 14 20 dB
S22 output return losses f = 40 t0 80 MHz 20 28.5 dB
f= 80 t0 160 MHz 18.5 28 dB
f= 160 t0 320 MHz 17 24 dB
f = 320 t0 640 MHz 15.5 19 dB
f = 640 t0 860 MHz 14 19 dB
S21 phase response f= 50 MHz -45 +45 deg
CTB composite triple beat 129 channels flat; Vo = 44 dBmV; measured at 859.25 MHz -54 -53 dB
Xmod cross modulation 129 channels flat; Vo = 44 dBmV; measured at 55.25 MHz -62 -61 dB
CSO composite second order distortion 129 channels flat; Vo = 44 dBmV; measured at 860.5 MHz -60.5 -54 dB
d2 second order distortion note l -73 -67 dB
Vo output voltage dim = -60 dB; note 2 +60 -61.5 dBmV
F noise figure see Table l dB
ltot total current consumption (DC) note 3 395 410 mA