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ST92P150CV1TB-E Datasheet

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
V(BR)DSS VGS(TO) IDSS IGSS +V(BR)GSS RDScON)	Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Gate source breakdown voltage Drain-source on-state resistance	VGS = 0 V; ID = 0.25 mA; Tj = -55aC VDS = VGS; ID = 1 mA Tj = 175aC Tj = -550C VDS = 55 V; VGS = 0 V; Tj = 1750C VGS = +10 V; VDS = 0 V Tj = 175aC IG = +1 mA; VGS = 10 V; ID = 20 A Tj = 1750C	55 50 2.0 1.0 16	3.0 0.05 0.04 22	4.0 4.4 10 500 1 20 28 59	V V V V cC V l

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di/dt = 100 A/Us VGs = 0

F - Diode Forward Current - A

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Thermal resistances corresponding to other copper areas can be obtained from Figure 21 0r by calculation using Equation 2. RejA is defined as the natural log of the area times a coefficient added to a constant. The area, in square inches is the top copper area including the gate and source pads.

i I Ti=2 5'C

VGE

\\. 2 0 0v- \\ 300V '400v- IU\

-200V

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