ST93S66MN6T Datasheet| Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) Tc = 250C. Un ess Otherwise Specified | | | PARAMETER | SYMBOL | TEST CONDITIONS | MAX | UNITS | | | Gate to Source Leakage Current | IGSS | VcS= +20V | +70 (Note 71 | nA | | Zero Gate Voltage Drain Current | IDSS | VDS = 80% Rated Value | _25 (Note 71 | c | | On Resistance | rDS(ON) | Tc = 250C at Rated ID | ±20% (Note 8) | l | | Gate Threshold Voltage | VGS(TH) | ID= 1mA | +70% (Note 8) | V | | NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. Screening Information | | | TEST | JANTXV EQUIVALENT | JANS EQUIVALENT | | | Gate Stress | VGS = -30V, t = 250~s | VGS = -30V, t = 250ffs | | Pind | Optional | Required | | Pre Burn-In Tests (Note 9) | MIL-S-19500 Group A, Subgroup 2 (AlI Static Tests at 250C) | MIL-S-19500 Group A, Subgroup 2 (AII Static Tests at 250C) | | Steady State Gate Bias (Gate Stress) | MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 1500C, Time = 48 hours | MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 1500C, Time = 48 hours | | Interim Electrical Tests (Note 9) | All Delta Parameters Listed in the Delta Tests and Limits Table | All Delta Parameters Listed in the Delta Tests and Limits Table | | Steady State Reverse Bias (Drain Stress) | MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 1500C, Time = 160 hours | MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 1500C, Time = 240 hours | | PDA | 10% | 5% | | Final Electrical Tests (Note 9) | MIL-S-19500, Group A, Subgroup 2 | MIL-S-19500, Group A, Subgroups 2 and 3 | | NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests | | | PARAMETER | SYMBOL | TEST CONDITIONS | MAX | UNITS | | | Safe Operating Area | SOA | VDS = -160V, t = 10ms | 3.5 | A | | Unclamped Inductive Switching | IAS | VGS(PEAK) = -15V, L = O.lmH | 81 | A | | Thermal Response | CVSD | tH = 100ms; VH = -25V; IH = 4A | 90 | mV | | Thermal Impedance | CVSD | tH = 500ms; VH = -25V; IH = 4A | 160 | mV | | | | | | | | | | | |
ST93S66MN6T Price Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may ap- pear in this material. ST93S66MN6T on stock| Characteristics | 95HQ015 | Units | | IF(AV) Rectangular waveform | 95 | A | | VRRM | 15 | V | | IFSM @tp=5pssine | 7500 | A | | VF @95Apk,Tj=750C | 0.39 | V | | Tj range | - 65 t0 100 | oc | | | |
| CHARAOTERISTIC | SYMaOL | TEST CONDITION | X41N | TYP". | MAX | UNIT | | | 6N135 | CTR | IF=16mA, V0,0.4V | 7 | 18 | | % | | 6N136 | VCC.45V, Ta=250'C (Note l) | 19 | 24 | | % | | Current Transfer Ratio | 6N135 | CTR | IF=16mA, VO=05V | 5 | 13 | | % | | 6N136 | VCC=45V ' (hWe l) | 1S | 21 | | % | | | 6N135 | | IF=t6mA,lO=1.1mA,VCC=45V | | n1 | 0.4 | V | | LogIc Law Output Voltage | 6N136 | VOL | IF=16mA,10=2AmA,VCC=45V | | n1 | a4 | V | | | ' IOH | IF=OmA, VO-VCC=55V Ta=25 C | | 3 | 5 | nA | | Logk HIgh Output Current | IF =OmA, VO =VCC =15V Ta=250C | | 0.1' | 1 | IcA | | IOH | IF =OmA, VO =VCC =15V | | | 250 | | | Logic Low Supply Current | ICCL | IF =16mA, VO =Opan, VCC=15V | | 40 | | rA | | Logic High Supply Current | ICCH | IF=OmA,VO=Open VCC =15V, Ta=250C | | 001 | 1 | A | | ICCH | IF =OmA, VO =Open, VCC =15V | | | 2 | | | Inpul Forward Voltage | VF | IF =16mA, Ta=25aC | | 1 | 1.7 | V | | Temperature Coefficient of Focward Voltage | AVF ATa | IF =16mA | | -{ | | U | | Input Reverse Breakkwn Voltage | BVR | IR =10pA, Ta=250C | 5 | | | V | | Input Capacitance | qN | llMHz, VF-O | | | | pF | | Input-Output Insulation Leakage Current | 11o | 45qh Relative Humidity, t=5S, VI 0=3000Vdq Ta=250C (hlote 2) | | | 1D | jlA | | Resistance (lnput-Oiltput) | Rl0 | V10 =500Vdc (Note 2) | | 1012 | | 0 | | Capacitance (Input Oulput) | CIO | f,lMHz (Note 2) | | 0.6 | | pF | | Transistor DC Current GaIn | hFE | V0=5V,10=3mA | | 80 | | | | | | | | | | |
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